Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Min Ki Na"'
Autor:
Min-Ki Na, Chris Hong, Donghyun Woo, Kyoung-Wook Ro, Pyong-Su Kwag, Dong-Kyu Lee, Ho-Ryeong Lee, Kyung-Dong Yoo, Kim Kyung Hwan, Sung-Kun Park, In-Wook Cho
Publikováno v:
ESSDERC
This paper reports the epitaxial-Si growth and dopant diffusion characteristics during fabrication of a vertical thin poly-Si channel (VTPC) transfer gate (TG) structured pixel, which is a possible candidate for future three-dimensional (3D) CMOS ima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2f2c342da8f0e8a328033faf5f4043
https://doi.org/10.1109/essderc.2017.8066631
https://doi.org/10.1109/essderc.2017.8066631
Autor:
In-Shik Han, Hyuk-Min Kwon, Hi-Deok Lee, Byoung Hun Lee, Min-Ki Na, Jung-Deuk Bok, Raj Jammy, Sang-Uk Park, C. Y. Kang, Won-Ho Choi
Publikováno v:
Microelectronic Engineering. 88:3399-3403
In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d131b7b6aa50fdc17a05aeedb6381d06
https://doi.org/10.1016/j.mee.2010.04.002
https://doi.org/10.1016/j.mee.2010.04.002
Autor:
Hyuk-Min Kwon, Hi-Deok Lee, Ook-Sang Yoo, R. Jammy, Jungwoo Oh, Min-Ki Na, H.-H. Tseng, Won-Ho Choi, In-Shik Han, Byung-Suk Park, Prashant Majhi
Publikováno v:
Microelectronic Engineering. 88:3424-3427
Analyzed herein is the impact of Si interface passivation layer (IPL) on device performance and reliability of Ge-on-Si field-effect transistors with HfSiO/TaN gate stack. Silicon passivation technique reduced the interface trap density as well as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5186a2721599b42a42a00fd27d42d781
https://doi.org/10.1016/j.mee.2009.11.019
https://doi.org/10.1016/j.mee.2009.11.019
Autor:
Hyuk-Min Kwon, Ook-Sang Yoo, In-Shik Han, Chang Yong Kang, Raj Jammy, Byoung Hun Lee, Yoon-Ha Jeong, Rino Choi, Hi-Deok Lee, Seung Chul Song, Min-Ki Na, Tae-Gyu Goo, Won-Ho Choi, Ga-Won Lee
Publikováno v:
Microelectronic Engineering. 86:268-271
For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8nm (T"i"n"v=1.2nm). A detailed DC analysis of I"o"n vs. I"o"f"f shows HfLaON performs somewhat better than HfLaSi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8270c4461d8f877f75f44ea97ebfc72e
https://doi.org/10.1016/j.mee.2008.04.008
https://doi.org/10.1016/j.mee.2008.04.008
Autor:
Hi-Deok Lee, Won-Ho Choi, In-Shik Han, Yoon Ha Jeong, Ying-Ying Zhang, Chang Yong Kang, Byoung Hun Lee, Hyuk-Min Kwon, R. Jammy, Gennadi Bersuker, Min-Ki Na, Jin-Suk Wang, Yong-Goo Kim
Publikováno v:
IEEE Electron Device Letters. 30:298-301
Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2 , dielectric breakdown behaviors of La-incorporated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a199c70f9b7d4c994519efd96174a7b
https://doi.org/10.1109/led.2008.2012272
https://doi.org/10.1109/led.2008.2012272
Autor:
Min Ki Na, Jin-Suk Wang, Byoung Hun Lee, Jungwoo Oh, Ook Sang Yoo, Prashant Majhi, Kyung Seok Min, Hyuk-Min Kwon, Kyong Taek Lee, H-H. Tseng, Hi-Deok Lee, Chang Yong Kang, Raj Jammy
Publikováno v:
Microelectronic Engineering. 86:259-262
The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54356a8cc8bfe72c9f5dc9aaf96ea32a
https://doi.org/10.1016/j.mee.2008.04.024
https://doi.org/10.1016/j.mee.2008.04.024
Autor:
Jungwoo Oh, Hsing-Huang Tseng, Jin Suk Wang, Chang Yong Kang, Min Ki Na, B. H. Lee, Hi Deok Lee, Hyuk-Min Kwon, Ook Sang Yoo, In Shik Han, Prashant Majhi, Raj Jammy, Won Ho Choi
Publikováno v:
Materials Science and Engineering: B. :102-105
We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d88b1a6400bdf493f0c2d2129558cb6
https://doi.org/10.1016/j.mseb.2008.06.031
https://doi.org/10.1016/j.mseb.2008.06.031
Autor:
Jae-Chul Om, Gi-Hyun Bae, Ga-Won Lee, Min-Ki Na, Seaung-Suk Lee, Won-Ho Choi, Hi-Deok Lee, In-Shik Han, Sung-soo Park
Publikováno v:
Japanese Journal of Applied Physics. 47:2692-2695
Ramping amplitude multi-frequency charge pumping technique is proposed to analyze the nitride traps in silicon?oxide?nitride?oxide?silicon (SONOS) structure. Based on the method, the trap density and the capture cross section at each location in oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd83c93390d922c619d26411efca62ca
https://doi.org/10.1143/jjap.47.2692
https://doi.org/10.1143/jjap.47.2692
Autor:
Dae-Byung Kim, Young-Seok Kang, Heui-Seung Lee, In-Shik Han, Min-Ki Na, Tae-Gyu Goo, Ook-Sang Yoo, Yong-Goo Kim, Hee-Hwan Ji, Hi-Deok Lee, Won-Ho Choi, Sung-Hyung Park
Publikováno v:
Japanese Journal of Applied Physics. 47:2628-2632
In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd883dba4e7609bb6728598682289aea
https://doi.org/10.1143/jjap.47.2628
https://doi.org/10.1143/jjap.47.2628
Autor:
Hyuk-Min Kwon, Hi-Deok Lee, Won-Ho Choi, Yoon-Ha Jeong, Gennadi Bersuker, Min-Ki Na, Tae-Gyu Goo, Byoung Hun Lee, R. Jammy, Chang Yong Kang, In-Shik Han
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (Tinv~1.2 nm). Digital and analog performances as well as reliability characteristics are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7040b7ea6b8e715839bb60c77d237ec6
https://doi.org/10.1109/iedm.2008.4796627
https://doi.org/10.1109/iedm.2008.4796627