Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Min Jae Yeom"'
Autor:
Jongho Ji, Jeong Yong Yang, Sangho Lee, Seokgi Kim, Min Jae Yeom, Gyuhyung Lee, Heechang Shin, Sang-Hoon Bae, Jong-Hyun Ahn, Sungkyu Kim, Jeehwan Kim, Geonwook Yoo, Hyun S. Kum
Publikováno v:
Communications Engineering, Vol 3, Iss 1, Pp 1-7 (2024)
Abstract Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating he
Externí odkaz:
https://doaj.org/article/cf3547738b2a4a989d8856bc549b8e72
Autor:
Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo
Publikováno v:
Micromachines, Vol 15, Iss 1, p 133 (2024)
Among various polymorphic phases of gallium oxide (Ga2O3), α-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this work, we demonstrate α-Ga2O3 MOSFETs with
Externí odkaz:
https://doaj.org/article/38a524fdce41422bb1d43a3959ffc00e
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1441 (2021)
AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal tre
Externí odkaz:
https://doaj.org/article/d5656ace5b044824aed7fb9559748f74
Autor:
Jeong Yong Yang, Minseong Park, Min Jae Yeom, Yongmin Baek, Seok Chan Yoon, Yeong Je Jeong, Seung Yoon Oh, Kyusang Lee, Geonwook Yoo
Publikováno v:
ACS Nano. 17:7695-7704
Autor:
Junsik Hwang, Hyun-Joon Kim-Lee, Seog Woo Hong, Joon-Yong Park, Dong Kyun Kim, Dongho Kim, Sanghoon Song, Jonghyun Jeong, Yongchan Kim, Min Jae Yeom, Min-chul Yu, Joosung Kim, Younghwan Park, Dong-Chul Shin, Sungjin Kang, Jai-Kwang Shin, Yongsung Kim, Euijoon Yoon, Hojin Lee, Geonwook Yoo, Jaewook Jeong, Kyungwook Hwang
Publikováno v:
Nature Electronics. 6:216-224
Publikováno v:
physica status solidi (a). 220:2200596
Autor:
Ha Young Kang, Min Jae Yeom, Jeong Yong Yang, Yoonho Choi, Jaeyong Lee, Changkun Park, Geonwook Yoo, Roy Byung Kyu Chung
Publikováno v:
Materials Today Physics. 31:101002
Autor:
Yeong Je Jeong, Ji-Hyeon Park, Min Jae Yeom, Inho Kang, Jeong Yong Yang, Hyeong-Yun Kim, Dae-Woo Jeon, Geonwook Yoo
Publikováno v:
Applied Physics Express. 15:074001
Here, we report on heteroepitaxial α-Ga2O3 MOSFETs with a breakdown voltage (BV) of 2.3 kV at a specific on-resistance of 335 mΩ cm2. High-quality α-Ga2O3 layers were grown on a sapphire substrate via halide vapor-phase epitaxy (HVPE). A stack of
Autor:
Jeong Yong Yang, Min Jae Yeom, Jaeyong Lee, Kyusang Lee, Changkun Park, Junseok Heo, Geonwook Yoo
Publikováno v:
Advanced Electronic Materials. 8:2101406
Autor:
Sukhyeong Youn, Min Jae Yeom, Jiwon Chang, Hyun Kum, Chan Ho Lee, Geonwook Yoo, Junseok Heo, Youngseo Park
Publikováno v:
Advanced Functional Materials. 32:2107992