Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Min Gee Kim"'
Autor:
Geun-Hye Hong, So-Young Lee, In Ah Kim, Jangmi Suk, Chaemin Baeg, Ji Yeon Kim, Sehee Lee, Kyeong Jin Kim, Ki Tae Kim, Min Gee Kim, Kun-Young Park
Publikováno v:
Nutrients, Vol 16, Iss 9, p 1339 (2024)
Heat-treated Lactiplantibacillus plantarum nF1 (HT-nF1) increases immune cell activation and the production of various immunomodulators (e.g., interleukin (IL)-12) as well as immunoglobulin (Ig) G, which plays an important role in humoral immunity, a
Externí odkaz:
https://doaj.org/article/2e8f37053f4c4095918a13ee3a5a4182
Publikováno v:
IEEE Transactions on Electron Devices. 68:2427-2433
We have investigated the effects of the Kr/O2-plasma reactive sputtering on the nondoped HfO2 thin-film formation for ferroelectric gate metal-ferroelectrics-Si field-effect transistor (MFSFET). The remnant polarization was increased while the coerci
Publikováno v:
IEICE Transactions on Electronics. :280-285
Publikováno v:
IEICE Transactions on Electronics. :286-292
Autor:
Dae Hee Han, Min Gee Kim, Kyung Eun Park, Seung Pil Han, Byung Eun Park, Soo Yong Kim, Gwang Geun Lee
Publikováno v:
Journal of the Korean Physical Society. 76:1088-1091
Paper transistors have the advantages of recyclability, high abundance, low cost, disposability, and biodegradability. In this paper, a nonvolatile transistor fabricated on a paper substrate without protective layers by using solution-based methods i
Publikováno v:
SID Symposium Digest of Technical Papers. 52:1459-1461
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 19:287-291
Autor:
Min Gee Kim, Shun-ichiro Ohmi
Publikováno v:
IEICE Transactions on Electronics. :435-440
Autor:
Myung-Shin Jeon, Minha Kim, So-Dam Kim, Kyoung-In Kim, Eun Hae Jeon, Min Gee Kim, Yu-Ree Lim, Enkhmaa Lkhagva-Yondon, Yena Oh, Kwangmin Na, Young Cheul Chung, Byung Kwan Jin, Yun Seon Song
BackgroundT lymphocytes are involved in infarct size at the early stage of stroke. However, the phenotypes of T lymphocytes and their functions in peripheral immune organs and the brain have not been well-analyzed from the acute to the chronic phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af4b6ed2197197ba3c8fd408dce0608
https://doi.org/10.21203/rs.3.rs-126766/v1
https://doi.org/10.21203/rs.3.rs-126766/v1
Publikováno v:
DRC
Ferroelectric nondoped HfO 2 has advantages compared to the doped HfO 2 in the reduction of crystallization temperature and threshold voltage (V TH ) control for the Metal-Ferroelectrics-Si FET (MFSFET) application [1] , [2] . It is usually difficult