Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Min Ci Wu"'
Publikováno v:
Advanced Science, Vol 6, Iss 24, Pp n/a-n/a (2019)
Abstract The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point
Externí odkaz:
https://doaj.org/article/508c8ce42e464893b49034d372a4076b
Publikováno v:
Scripta Materialia. 187:439-444
Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4caac80e4e80bfcc85d2da6b01200fb2
https://doi.org/10.1016/j.scriptamat.2020.06.061
https://doi.org/10.1016/j.scriptamat.2020.06.061
Autor:
Min-Ci Wu, Szu-Chen Wu, Ta-Chung Liu, Pu-Wei Wu, San-Yuan Chen, Pei-Sung Hung, Chun-Wei Liang, Wen-Wei Wu, Tsung-Yu Li
Publikováno v:
ACS Applied Energy Materials. 3:3596-3608
Silk fibroin (SF) is recognized for its rich nitrogen content and has been explored for its promising potential in energy storage because of its hexagonal pseudographitic structure from the direct ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eadf36ea4c8d9b4edde681c4c3e962ab
https://doi.org/10.1021/acsaem.0c00095
https://doi.org/10.1021/acsaem.0c00095
Autor:
Tu Lan, Chih Yang Huang, Jeng Kuei Chang, Wen-Wei Wu, Yen Jung Chen, Min Ci Wu, Rüdiger-A. Eichel, Chih-Long Tsai, Tzu Hsuan Yu
Publikováno v:
Nano energy 87, 106144-(2021). doi:10.1016/j.nanoen.2021.106144
Ceramic-based all-solid-state sodium batteries (Na-ASSBs) are prospective alternative energy storage systems due to the abundant sodium resources and their high safety. A previous study showed that chemical infiltration could methodically improve not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53abc07c863921c6ce3c9efdc1c2ea35
https://hdl.handle.net/2128/29863
https://hdl.handle.net/2128/29863
Publikováno v:
SSRN Electronic Journal.
Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/ p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46acd85580d32468791209b08a39db3e
https://doi.org/10.2139/ssrn.3580436
https://doi.org/10.2139/ssrn.3580436
Autor:
Chih Yang Huang, Jeng Kuei Chang, Chun Wei Huang, Ju Li, Thi Xuyen Nguyen, Wen-Wei Wu, Jagabandhu Patra, Min Ci Wu, Jyh Ming Ting, Oliver Clemens, Mu Tung Chang
Publikováno v:
Chemical Engineering Journal. 420:129838
Transition-metal high-entropy oxides (HEOs) are promising electrode materials for lithium-ion batteries (LIBs) due to their superior electrochemical properties and excellent long-term cycling stability. The performance of HEOs for LIBs is highly corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::512610ebc73fba82dd21c742abb001c6
https://doi.org/10.1016/j.cej.2021.129838
https://doi.org/10.1016/j.cej.2021.129838
Autor:
Wen-Wei Wu, Fang Chun Shen, An Yuan Ho, Shu Chin Tsai, Chih Yang Huang, Jui Yuan Chen, Hong Yang Lo, Yi Tang Tseng, Min Ci Wu
Publikováno v:
Advanced Electronic Materials. 7:2100605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e03d8ff228569108efeefc445b0e9e0
https://doi.org/10.1002/aelm.202100605
https://doi.org/10.1002/aelm.202100605
Autor:
Chien-Ting Wu, Yueh-Hua Chu, Min-Ci Wu, Tian-Sheuan Chang, Hsin-Hui Huang, Chih-Cheng Chang, Shyh-Shyuan Sheu, Wen-Wei Wu, Tzu-Yun Wu, Heng-Yuan Lee, Chien-Hua Hsu, Wei-Chung Lo, Ming-Hung Wu, Tuo-Hung Hou
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
This paper presents a unique opportunity of HZO ferroelectric tunnel junction (FTJ) for in-memory computing. The device operates at an extremely low sub-nA current while simultaneously achieving 50-ns fast switching, > 107 cycling endurance, > 10-yr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60b2539d9f936e57925db48ffad6f643
https://doi.org/10.1109/iedm19573.2019.8993565
https://doi.org/10.1109/iedm19573.2019.8993565
Publikováno v:
Advanced Science
Advanced Science, Vol 6, Iss 24, Pp n/a-n/a (2019)
Advanced Science, Vol 6, Iss 24, Pp n/a-n/a (2019)
The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39eea8f0a29d59758e3b521abcc4375e
https://pubmed.ncbi.nlm.nih.gov/31890465
https://pubmed.ncbi.nlm.nih.gov/31890465
Publikováno v:
Applied Surface Science. 544:148874
The Mo5O14-type structure is representative of the MoO-based catalyst in the selective oxidation process. Single-crystalline Mo5O14 nanowires can be synthesized in a controlled manner by chemical vapor deposition (CVD). A nanowire catalyst with a por
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::131a2aec7988ca0e42fab2de67ecd422
https://doi.org/10.1016/j.apsusc.2020.148874
https://doi.org/10.1016/j.apsusc.2020.148874