Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Min Chul Chun"'
Publikováno v:
Journal of Alloys and Compounds. 781:1028-1032
We investigated the effects of Pb content and electrode materials on the ferroelectric properties of metal/Pb(Zr0.52Ti0.48)O3/metal thin film capacitors for non-volatile memory device applications. The increase of Pb content resulted in a change from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a3f2a53c69323c844ed1a9cf3f7398a
https://doi.org/10.1016/j.jallcom.2018.12.155
https://doi.org/10.1016/j.jallcom.2018.12.155
Autor:
Min Chul Chun, Sanghyun Park, Youngji Noh, Solmin Park, Ga-yeon Park, Seung-Eon Ahn, Bo Soo Kang, Moonyoung Jung
Publikováno v:
Current Applied Physics. 19:347-350
Negative capacitance (NC) phenomena is recently suggested as a breakthrough that can lead to the improved transistor by decreasing the subthreshold swing. To understand the NC phenomena, we investigated the effects of the ferroelectric properties suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6f19489a140a8f40f118eb469e8b49
https://doi.org/10.1016/j.cap.2018.12.017
https://doi.org/10.1016/j.cap.2018.12.017
Publikováno v:
Nanotechnology. 31(24)
Optimization and performance enhancement of a low-cost, solution-processed InGaZnO (IGZO) resistance random access memory (ReRAM) device using the manipulation of global and local oxygen vacancy (Vo) stoichiometry in metal oxide thin films was demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9710cc1585655999a2a91f6b071b7497
https://pubmed.ncbi.nlm.nih.gov/32155592
https://pubmed.ncbi.nlm.nih.gov/32155592
Publikováno v:
Current Applied Physics. 19:503-505
We investigated the effect of repetitive switching of polarization on the ferroelectric Pt/Pb(Zr0.52Ti0.48)O3/Pt thin film capacitor by using impedance spectroscopy. From the Cole-Cole plot, the equivalent circuit is described as a combination of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15220ff62c5d9109c2cdd904d9b16ecc
https://doi.org/10.1016/j.cap.2019.02.003
https://doi.org/10.1016/j.cap.2019.02.003
Autor:
Min Chul Chun, Min Jin Kim, Bo Soo Kang, Jun Young Lee, Sanghyun Park, Cheoljun Kim, Yongjun Cho, Ji Young Jo
Publikováno v:
Journal of Applied Physics. 129:164101
The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c6517b408fc5a1f3bcf94dc87ff28b
https://doi.org/10.1063/5.0039446
https://doi.org/10.1063/5.0039446
Autor:
Chansoo Yoon, Bo Soo Kang, Min Chul Chun, Bae Ho Park, Young-Sun Kwon, Hye-Jin Shin, Gyuyeon Jang, Keundong Lee, Sang-Chul Na
Publikováno v:
Journal of the Korean Physical Society. 68:1467-1471
The set process in a unipolar resistance switching Pt/NiO/Pt thin film was conducted in two different ways: the current-biased set process (current sweep mode) and the voltage-biased set process (voltage sweep mode). In the current-biased set process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b173cce687ec763158ddfdb1d45c2c84
https://doi.org/10.3938/jkps.68.1467
https://doi.org/10.3938/jkps.68.1467
Autor:
Solmin Park, Sanghyun Park, Min Chul Chun, Ga-yeon Park, Bo Soo Kang, Min Jin Kim, Yongjun Cho
Publikováno v:
Journal of Alloys and Compounds. 823:153777
We investigated the effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with an imprint. From the polarization-voltage hysteresis loops, wake-up and imprint effects were observed. We measured the polarization switched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::048b4a017b8eeec24580a69e6e521495
https://doi.org/10.1016/j.jallcom.2020.153777
https://doi.org/10.1016/j.jallcom.2020.153777
Publikováno v:
Journal of the Korean Physical Society. 65:1073-1077
We observed two different set processes, gradual and avalanche, for the resistance switching (RS) of a Ta/TaOx/Pt thin-film device. The gradual and the avalanche set processes could be controlled by adjusting the external reset voltage. From the curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589982a782b90ba8e9c2e6cf86c93792
https://doi.org/10.3938/jkps.65.1073
https://doi.org/10.3938/jkps.65.1073
Autor:
Min Chul Chun, Jae-Jun Kim, Bo Soo Kang, Jungwook Shon, Hyun Jin Kim, Sunkak Jo, Sang-Chul Na
Publikováno v:
Journal of the Korean Physical Society. 63:2277-2280
A unipolar resistance switching (URS) Pt/NiO/Pt thin film structure was successfully deposited by sputtering. Each state was analyzed by using impedance spectroscopy. The equivalent circuit of the pristine state consists of resistor-capacitor paralle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f922dde1cfb7b79823905085655d272
https://doi.org/10.3938/jkps.63.2277
https://doi.org/10.3938/jkps.63.2277
Publikováno v:
Journal of Energy and Power Engineering. 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ff5dbbec2ea6178c4b30609ebd79f9
https://doi.org/10.17265/1934-8975/2016.03.008
https://doi.org/10.17265/1934-8975/2016.03.008