Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Min Chuan Wang"'
Autor:
Min-Chuan Wang, Bo-Hsien Wu, Shang-En Liu, Yu-Chen Li, Shih-Kai Lin, Tsung-Ming Tsai, Ting-Chang Chang
Publikováno v:
AIP Advances, Vol 13, Iss 9, Pp 095011-095011-5 (2023)
A solid-state semiconductor battery with the n-type WO3/silica-coated TiO2 core–shell nanoparticles/p-type NiO laminated structure for the rechargeable device has been developed. The electricity storage layer comprises poly-acrylonitrile mixed with
Externí odkaz:
https://doaj.org/article/f3c6223999ed4149bfcbd9ccc48398e1
Autor:
Tien-Hsiang Hsueh, Min-Chuan Wang, Shang-En Liu, Bo-Hsien Wu, Yu-Chen Li, Ding-Guey Tsai, Shu-Mei Chang, Angus Shiue, Kai-Yen Chin
Publikováno v:
Electrochemistry Communications, Vol 150, Iss , Pp 107478- (2023)
The anode-less lithium battery with the structure of lithium nickel manganese cobalt oxide (LiNi0.33Mn0.33Co0.33O2, NMC111) /gel polymer electrolyte (GPE)/silver (Ag)/ conductive carbon black (CCB) coated aluminum current collectors has been proposed
Externí odkaz:
https://doaj.org/article/e0d16486044d42ddb36c0e29668da6b4
Autor:
Yu-Ting Su, Hsi-Wen Liu, Po-Hsun Chen, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan, Cheng-Hsien Wu, Chih-Cheng Yang, Min-Chuan Wang, Shengdong Zhang, Hao Wang, Simon M. Sze
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 341-345 (2018)
In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing t
Externí odkaz:
https://doaj.org/article/22fe792bb7c64ceb98d62892a541b82a
Autor:
Min-Chuan Wang, Yu-Chen Li, Jen-Yuan Wang, Yi-Shiou Chen, Chi-Hung Su, Tien-Hsiang Hsueh, Sheng-Chuan Hsu, Jin-Yu Wu, Der-Jun Jan
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015207-015207-6 (2018)
The all-solid-state electrochromic device (ECD) with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS) and in-situ doping cathodic vacuum arc plasma (CVAP) technology has been developed. The electrochromic (EC) lay
Externí odkaz:
https://doaj.org/article/14178ab502fd4eba8d502825689e3dd5
Autor:
Min-Chuan Wang, Yung-Chih Chen, Ming-Hao Hsieh, Yu-Chen Li, Jen-Yuan Wang, Jin-Yu Wu, Wen-Fa Tsai, Der-Jun Jan
Publikováno v:
AIP Advances, Vol 6, Iss 11, Pp 115009-115009-5 (2016)
The all-solid-state electrochromic device (ECD) with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS) and cathodic vacuum arc plasma (CVAP) technology has been developed for smart electrochromic (EC) glass applica
Externí odkaz:
https://doaj.org/article/6ace3c8de32b43458bb1e126adbe63ce
Autor:
Chun-Chu, Lin, Po-Hsun, Chen, Min-Chen, Chen, Min-Chuan, Wang, Chih-Cheng, Yang, Hui-Chun, Huang, Chung-Wei, Wu, Sheng-Yao, Chou, Tsung-Ming, Tsai, Ting-Chang, Chang
Publikováno v:
Nanotechnology. 33(27)
In this study, we have investigated the improvements in the performance of an all-solid-state complementary electrochromic device (ECD) by using the proposed high pressure treatment (HPT). The Li:Ta
Autor:
Tien-Hsiang Hsueh, Chun-Huang Tsai, Shang-En Liu, Min-Chuan Wang, Shu-Mei Chang, Angus Shiue, Kai-Yen Chin
Publikováno v:
Journal of The Electrochemical Society. 169:100506
Lithium cobalt oxide (LiCoO2, LCO) thin-film cathodes are usually prepared with slow deposition rates by sputtering techniques. Atmospheric plasma spraying (APS) is a possible technology for the rapid deposition method replacing sputter deposition to
Autor:
Chun-Chu Lin, Po-Hsun Chen, Min-Chen Chen, Min-Chuan Wang, Chih-Cheng Yang, Hui-Chun Huang, Chung-Wei Wu, Sheng-Yao Chou, Tsung-Ming Tsai, Ting-Chang Chang
Publikováno v:
Nanotechnology. 33:275711
In this study, we have investigated the improvements in the performance of an all-solid-state complementary electrochromic device (ECD) by using the proposed high pressure treatment (HPT). The Li:Ta2O5 electrolyte layer was recrystallized by the HPT
Autor:
Min-Chuan Wang, Simon M. Sze, Hao Wang, Chih-Cheng Yang, Po-Hsun Chen, Cheng-Hsien Wu, Chih-Hung Pan, Hsi-Wen Liu, Tian-Jian Chu, Shengdong Zhang, Yu-Ting Su, Ting-Chang Chang, Tsung-Ming Tsai
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 341-345 (2018)
In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing t
Autor:
Tai Fa Young, Guan Ru Liu, Jung Hui Chen, Ting-Chang Chang, Geng Wei Chang, Chi Fong Ai, Yong En Syu, Tai Ya Hsiang, Kuan-Chang Chang, Min Chen Chen, Jen-Wei Huang, Kai Huang Chen, Yu Ting Su, Tsung-Ming Tsai, Min Chuan Wang, Kuo Hsiao Liao, Rui Zhang, Tian Jian Chu, Simon M. Sze, Jhih Hong Pan, Syuan Yong Huang
Publikováno v:
The Journal of Supercritical Fluids. 178:105350