Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Min‐Soo Yoo"'
Autor:
Hyeok Yun, Hyundong Jang, Seunghwan Lee, Junjong Lee, Kyeongrae Cho, Seungjoon Eom, Soomin Kim, Choong‐Ki Kim, Hong‐Chul Byun, Seongjoo Han, Min‐Soo Yoo, Rock‐Hyun Baek
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 10, Pp n/a-n/a (2024)
Artificial intelligence (AI) is increasingly used to solve multi‐objective problems and reduce the turnaround times of semiconductor processes. However, only brief AI explanations are available for process/device/circuit engineers to provide holist
Externí odkaz:
https://doaj.org/article/91aef74518cb42309f1ee6a2d0f2554b
Autor:
Hyeok Yun, Chang-Hyeon An, Hyundong Jang, Kyeongrae Cho, Jeong-Sik Lee, Seungjoon Eom, Choong-Ki Kim, Min-Soo Yoo, Hyun-Chul Choi, Rock-Hyun Baek
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 9, Pp n/a-n/a (2023)
Herein, novel neural network (NN) methods that improve prediction accuracy and reduce output variance of the optimized input in the gradient method for cross‐sectional data are proposed, and the variability evaluation approach of optimized inputs i
Externí odkaz:
https://doaj.org/article/ab5cb2a7ed1c40f0b5d17fbb27fbd5d2
Publikováno v:
IEEE Electron Device Letters. 42:1731-1734
Stress-induced damage in a MOSFET can be cured by Joule heating, which can be produced by an intentional forward junction current ( ${I}_{\textbf {FWD}}$ ). This curing effect can be further enhanced by the simultaneous application of gate biasing, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f39614c29c42af03344408b49a5ff2af
https://doi.org/10.1109/led.2021.3119281
https://doi.org/10.1109/led.2021.3119281
Publikováno v:
IEEE Transactions on Electron Devices. 67:4366-4371
Low-frequency noise (LFN) characteristics under OFF-state stress (OSS), which degrade device performance, were investigated in n-channel MOSFETs. The power spectral density (PSD) was analyzed by investigating the LFN and the border traps located in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af0c0673050c2a849eb324c5eaa33076
https://doi.org/10.1109/ted.2020.3015445
https://doi.org/10.1109/ted.2020.3015445
Publikováno v:
IEEE Electron Device Letters. 41:804-807
The turn-around effect of drain linear current (Idlin) with stress time in a pMOSFET in the off-state stress is investigated. The degradation rate of Idlin increases to a maximum of 6.1% at 20 s of the stress time and then continuously decreases to 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56943f3d3ad6e0efc34b50fb1582bd4
https://doi.org/10.1109/led.2020.2989324
https://doi.org/10.1109/led.2020.2989324
Publikováno v:
IEEE Transactions on Electron Devices. 66:5126-5132
The gate-induced drain leakage (GIDL) current is one of the major leakage sources in a dynamic random-access memory (DRAM) cell transistor. In addition to band-to-band tunneling (BTBT), which causes GIDL in the gate-to-drain overlap region, the gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6bed159be20522f5a1f20b59c5539ee
https://doi.org/10.1109/ted.2019.2947603
https://doi.org/10.1109/ted.2019.2947603
Autor:
Jung Ho Shin, Min-Soo Yoo, Sung-Joo Hong, Yong-Taik Kim, Tae-Kyung Oh, Tae-Su Jang, Kyung Kyu Min, Donghoon Nam, Heimi Kwon, Seong-Wan Ryu
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We demonstrated a highly reliable buried-gate saddle-fin cell-transistor (cell-TR) using silicon migration technique of hydrogen (H 2 ) annealing after a dry etch to form the saddle-fin in a fully integrated 2y-nm 4Gb DRAM. It clearly shows a reducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ecc4366a8e576cbe5bcf1385d2c933d
https://doi.org/10.1109/iedm.2017.8268437
https://doi.org/10.1109/iedm.2017.8268437
Publikováno v:
Microelectronics Reliability. 104:113548
This study demonstrates a method for curing the gate dielectric of a MOSFET using Joule heat (JH) generated by forward bias current in the PN-junction in the drain-to-body (D-B) and source-to-body (S B). To accurately quantify the curing effect by th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8021e18bcf3c89744579a1d8420b28c8
https://doi.org/10.1016/j.microrel.2019.113548
https://doi.org/10.1016/j.microrel.2019.113548
Autor:
Jae Goan Jeong, Yun Taek Hwang, Min Soo Yoo, Jaehoon Choi, Yunseok Chun, Sungwook Park, Hyoung-Gyu Choi, Sung Kye Park, Tae Kyung Oh, Shin Gyu Choi, Sung Joo Hong, Yun Ik Son, Kang Sik Choi, Jong Ii Kim, Woo Kyung Sun
Publikováno v:
Journal of the Korean Physical Society. 56:643-647
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd07dac91e7b0fe8b04a3b34acc3e28
https://doi.org/10.3938/jkps.56.643
https://doi.org/10.3938/jkps.56.643
Autor:
Min-Soo Yoo, Jong-Ho Lee, Sung-Joo Hong, Kyung-Do Kim, Byung-Gook Park, Chan-Hyeong Park, Sung-Kye Park, Yong-Taik Kim, Kwi-Wook Kim
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
To characterize electrically the effect of the Cu diffusion in TSVs, a new test pattern is proposed and its effectiveness is verified experimentally. The test pattern has a shallow n+ region formed in an n-well region butted to the TSV dielectric sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e5c612a01f8cf861f358cfe5f7b5df
https://doi.org/10.1109/iedm.2015.7409645
https://doi.org/10.1109/iedm.2015.7409645