Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Miloš Nesládek"'
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Abstract The negatively charged nitrogen-vacancy ( $$\hbox {NV}^{-}$$ NV - ) center shows excellent spin properties and sensing capabilities on the nanoscale even at room temperature. Shallow implanted $$\hbox {NV}^{-}$$ NV - centers can effectively
Externí odkaz:
https://doaj.org/article/1037e43f3b5546f7bd7ccbdc75392dd0
Autor:
Suzan Meijs, Matthew McDonald, Søren Sørensen, Kristian Rechendorff, Ladislav Fekete, Ladislav Klimša, Václav Petrák, Nico Rijkhoff, Andrew Taylor, Miloš Nesládek, Cristian P. Pennisi
Publikováno v:
Frontiers in Bioengineering and Biotechnology, Vol 6 (2018)
Robust devices for chronic neural stimulation demand electrode materials which exhibit high charge injection (Qinj) capacity and long-term stability. Boron-doped diamond (BDD) electrodes have shown promise for neural stimulation applications, but the
Externí odkaz:
https://doaj.org/article/5e7bfbe63dd34961bc38f40bd672191b
Autor:
Mark A. Keppler, Zachary A. Steelman, Zachary N. Coker, Miloš Nesládek, Philip R. Hemmer, Vladislav V. Yakovlev, Joel N. Bixler
Publikováno v:
Photonics Res
Nitrogen vacancy diamonds have emerged as sensitive solid-state magnetic field sensors capable of producing diffraction limited and sub-diffraction field images. Here, for the first time, to our knowledge, we extend those measurements to high-speed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1a059e677269cb9268d5bf8ee15ccfb
https://europepmc.org/articles/PMC10256238/
https://europepmc.org/articles/PMC10256238/
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
The negatively charged nitrogen-vacancy (NV−) center shows excellent spin properties and sensing capabilities on the nanoscale even at room temperature. Shallow implanted NV− centers can effectively be protected from surface noise by chemical vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27747208041d7a47d40322005d81207d
http://hdl.handle.net/1942/33334
http://hdl.handle.net/1942/33334
Publikováno v:
Physics and Applications of CVD Diamond. :13-27
Autor:
Michal Gulka, Daniel Wirtitsch, Viktor Ivády, Jelle Vodnik, Jaroslav Hruby, Goele Magchiels, Emilie Bourgeois, Adam Gali, Michael Trupke, Milos Nesladek
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Nuclear spins in diamond are promising for applications in quantum technologies due to their long coherence times. Here, the authors demonstrate a scalable electrical readout of individual intrinsic 14N nuclear spins in diamond, mediated by hyperfine
Externí odkaz:
https://doaj.org/article/88bb80f9becf411287bbed9ce62a36d7
Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitoni
Autor:
Romain Carron, Enrico Avancini, Thomas Feurer, Benjamin Bissig, Paolo A. Losio, Renato Figi, Claudia Schreiner, Melanie Bürki, Emilie Bourgeois, Zdenek Remes, Milos Nesladek, Stephan Buecheler, Ayodhya N. Tiwari
Publikováno v:
Science and Technology of Advanced Materials, Vol 19, Iss 1, Pp 396-410 (2018)
Cu(In,Ga)Se2 -based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se2 solar cells wi
Externí odkaz:
https://doaj.org/article/ab7e9cc8e2d84dc78f6d6304652e923e
Autor:
Irena Kratochvílová, Alexander Kovalenko, František Fendrych, Vladimíra Petráková, Stanislav Záliš, Miloš Nesládek
Publikováno v:
Journal of Materials Chemistry; Nov2011, Vol. 21 Issue 45, p18248-18255, 8p
Publikováno v:
Journal of Non-Crystalline Solids. :811-814
TM-SCLC method has been used for the study of metastable, light-induced density of states phosphorous-doped a-Si:H. The metastable changes are, in comparison with an undoped a-Si:H, basically different. The increasing peak (or shoulder) near the cond