Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Mills Jr., A. P."'
Publikováno v:
Phys. Rev. A 103, 043518 (2021)
A few years ago Avetissian {\it et al.} \cite{Avetissian2014,Avetissian2015} discovered that the exponential growth rate of the stimulated annihilation photons from a singlet positronium Bose-Einstein condensate should be proportional to the square r
Externí odkaz:
http://arxiv.org/abs/2103.16619
Autor:
Hu, Wenxiang, Lawson, Matthew, Budker, Dmitry, Figueroa, Nataniel L., Kimball, Derek F. Jackson, Mills Jr., Allen P., Voigt, Christian
Publikováno v:
Eur. Phys. J. D (2020) 74: 115
Hidden matter that interacts only gravitationally would oscillate at characteristic frequencies when trapped inside of Earth. For small oscillations near the center of the Earth, these frequencies are around 300 $\mu$Hz. Additionally, signatures at h
Externí odkaz:
http://arxiv.org/abs/1912.01900
Autor:
Gao, X. P. A., Boebinger, G. S., Mills Jr., A. P., Ramirez, A. P., Pfeiffer, L. N., West, K. W.
Publikováno v:
Phys. Rev. B 73, 241315(R) (2006)
We observe that an in-plane magnetic field ($B_{||}$) can induce an order of magnitude enhancement in the low temperature ($T$) resistivity ($\rho$) of metallic 2D holes in a narrow (10nm) GaAs quantum well. Moreover, we show the first observation of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0506031
Autor:
Gao, X. P. A., Boebinger, G. S., Mills Jr., A. P., Ramirez, A. P., Pfeiffer, L. N., West, K. W.
Publikováno v:
Phys. Rev. Lett. 94, 086402 (2005)
We have studied the temperature dependent phonon emission rate $P$($T$) of a strongly interacting ($r_s\geq$22) dilute 2D GaAs hole system using a standard carrier heating technique. In the still poorly understood metallic state, we observe that $P$(
Externí odkaz:
http://arxiv.org/abs/cond-mat/0501686
Autor:
Gao, Xuan P. A., Boebinger, G. S., Mills Jr., A. P., Ramirez, A. P., Pfeiffer, L. N., West, K. W.
Publikováno v:
Phys. Rev. Lett. 93, 256402 (2004)
We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $\rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall coefficient, $
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411391
The resistivity $\rho$ of high mobility dilute 2D holes in GaAs exhibits a peak at a certain temperature $T^*$ in zero magnetic field($B$=0). In the $T>T^*$ regime where d$\rho$/d$T<$0, we observe for the first time both the $\nu=1$ quantum Hall(QH)
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308003
Autor:
Gao, Xuan P. A., Mills, Jr., Allen P., Ramirez, Arthur P., Simon, Steven H., Pfeiffer, Loren N., West, Kenneth W.
We present measurements of the Joule heating of a 2D hole gas (2DHG) formed in a 30nm GaAs quantum well. The hole density is in the range (4.6-18.9)*10^9cm^-2 and exhibits an apparent metal-to-insulator transition (MIT) with a critical density 6*10^9
Externí odkaz:
http://arxiv.org/abs/cond-mat/0203151
Autor:
Gao, Xuan P. A., Mills Jr., Allen P., Ramirez, Arthur P., Pfeiffer, Loren N., West, Kenneth W.
Publikováno v:
Phys. Rev. Lett. 89, 016801 (2002)
We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field 'metal-insulator transiti
Externí odkaz:
http://arxiv.org/abs/cond-mat/0110608
Autor:
Gao, Xuan P. A., Mills, Jr., Allen P., Ramirez, Arthur P., Pfeiffer, Loren N., West, Kenneth W.
Publikováno v:
Phys. Rev. Lett. 88, 166803 (2002)
We have investigated the effect of an in plane parallel magnetic field (B_||) on two high mobility metallic-like dilute two-dimensional hole gas (2DHG) systems in GaAs quantum wells. The experiments reveal that, while suppressing the magnitude of the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0110571
We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the conductivity g
Externí odkaz:
http://arxiv.org/abs/cond-mat/0101020