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Autor:
Mills Duane R, Tomohito Tsushima, Kirk D. Prall, Jahanshir Javanifard, Keiichi Tsutsui, Glen E. Hush, Fackenthal Richard E, Makoto Kitagawa, Wataru Otsuka, Kerry Dean Tedrow, Yoshiyuki Shibahara
Publikováno v:
ISSCC
Resistive RAMs (ReRAMs) have emerged as leading candidates to displace conventional Flash memories due to their high density, good scalability, low power and high performance. Previous ReRAM designs demonstrating high performance have done so on low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c943586df7fee0f65d60123f6f9eb596
https://doi.org/10.1109/isscc.2014.6757460
https://doi.org/10.1109/isscc.2014.6757460
