Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Milko Jakšic̈"'
Autor:
Kristina Tomić Luketić, Juraj Hanžek, Catalina G. Mihalcea, Pavo Dubček, Andreja Gajović, Zdravko Siketić, Milko Jakšić, Corneliu Ghica, Marko Karlušić
Publikováno v:
Crystals, Vol 12, Iss 6, p 865 (2022)
The aim of this experimental work was to investigate the influence of the ion beam charge state on damage production in nanomaterials. To achieve this, we employed Raman spectroscopy, atomic force microscopy, and transmission electron microscopy to i
Externí odkaz:
https://doaj.org/article/e1229973326b496bb44cd0deeb487638
Autor:
Ivan Jurković, Milko Jakšić
Publikováno v:
Geologia Croatica, Vol 47, Iss 1, Pp 83-102 (2010)
The metamorphic complex of the Busovaca area is mostly composed of Upper Silurian-Lower Devonian metapelites, metapsammites and metarhyolites formed under low grade metamorphism at 350° to 450°C and 3 to 5 kbars. The ore minerals of the Busovaca de
Externí odkaz:
https://doaj.org/article/94a538abf8414028b2c8c03125cafb77
Autor:
Elisabetta Medina, Enrico Sangregorio, Andreo Crnjac, Francesco Romano, Giuliana Milluzzo, Anna Vignati, Milko Jakšic, Lucia Calcagno, Massimo Camarda
Publikováno v:
Micromachines, Vol 14, Iss 1, p 166 (2023)
Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irr
Externí odkaz:
https://doaj.org/article/b2d0b04316424e2cbcedf6ae3e05deba
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 537:14-22
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c3081783cc7db4ebbbf03668eea3d43
https://doi.org/10.1016/j.nimb.2023.01.009
https://doi.org/10.1016/j.nimb.2023.01.009
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-8 (2023)
Abstract With the number of qubits increasing with each new quantum processor design, it is to be expected that the area of the future quantum devices will become larger. As diamond is one of the promising materials for solid state quantum devices fa
Externí odkaz:
https://doaj.org/article/81ba5fd850264e358d56a01a0ccce6d1
Autor:
Milko Jakšić, Andreo Crnjac, Gregor Kramberger, Miloš Manojlović, Gordana Laštovička-Medin, Mauricio Rodriguez Ramos
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
The development of semiconductor detectors with an increased tolerance to high radiation levels often results in devices that deviate significantly from those of the classical design with planar electrodes. Decreasing the charge drift distance and/or
Externí odkaz:
https://doaj.org/article/5d0daff23bcd4de98a45df3ae6aa58a1
Autor:
Valeria Lotito, Marko Karlušić, Milko Jakšić, Kristina Tomić Luketić, Ulrich Müller, Tomaso Zambelli, Stjepko Fazinić
Publikováno v:
Nanomaterials, Vol 10, Iss 3, p 453 (2020)
Self-assembly of colloidal monolayers represents a prominent approach to the fabrication of nanostructures. The modification of the shape of colloidal particles is essential in order to enrich the variety of attainable patterns which would be limited
Externí odkaz:
https://doaj.org/article/2e24a5362f714e3fa1379fab8449bec7