Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Milim Park"'
Autor:
Hae chang Yang, Sukkwang Park, Gi-Hyun Bae, Sangjo Lee, Milim Park, Yunbong Lee, Min Sang Park, Pyunghwa Kim, Jiyul Park, Sungjo Park, Sunghoon Cho, Byoungjun Park, Sungwook Park, Myoung Kwan Cho, Kun-Ok Ahn
Publikováno v:
2012 4th IEEE International Memory Workshop.
In this paper, we discuss about the abnormal program phenomena of sub-20 nm NAND Flash memory devices based on floating gates. These phenomena are varied with the doping concentration and isolations. In sub-20 nm NAND technology, the optimized S/D ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e6b8b01da4ba7303410b8b3e7f4e69
https://doi.org/10.1109/imw.2012.6213622
https://doi.org/10.1109/imw.2012.6213622
Autor:
Sangjo Lee, Sunghoon Cho, Milim Park, Pyunghwa Kim, Kun-Ok Ahn, Myoung Kwan Cho, Sungwook Park, Gi-Hyun Bae, Hyunyoung Shim, YeonJoo Jeong, SungPyo Lee
Publikováno v:
2012 4th IEEE International Memory Workshop.
In this paper, the challenges of NAND flash memory devices with E/W cycling characteristics are discussed. The large VTH shift in 2y-nm technology is investigated with various causes such as air-gap, poly2 valley plug gap-fill and string current. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dadc7e9a024057156ea692d6b5236c44
https://doi.org/10.1109/imw.2012.6213619
https://doi.org/10.1109/imw.2012.6213619
Autor:
Kun-Ok Ahn, Dong-Kyu Lee, Seokwon Cho, Ho Seok Lee, Sukkwang Park, Chonga Hong, Yo-Hwan Koh, YeonJoo Jeong, Milim Park, Myoung Kwan Cho
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
In this paper, we present the impact of hot carrier injection (HCI) during programming operation in NAND Flash, and describe how HCI degrades reliability characteristics. In order to understand reliability degradation induced by HCI, we evaluated the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e516333029096e0828f93f2f5818285b
https://doi.org/10.1109/irps.2010.5488692
https://doi.org/10.1109/irps.2010.5488692
Autor:
Joong-Seob Yang, S. Jung, Juyeab Lee, Kun-Ok Ahn, Myoung Kwan Cho, Sung-Kye Park, Yo-Hwan Koh, Ho-Seok Lee, Sang-Hoon Cho, K. Jin, Milim Park, J. An
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c843402b5777b8785097390d4625542
https://doi.org/10.7567/ssdm.2009.g-4-2
https://doi.org/10.7567/ssdm.2009.g-4-2
Autor:
Milim Park, Sukkwang Park, Seokwon Cho, Dong-Kyu Lee, YeonJoo Jeong, Chonga Hong, Ho Seok Lee, Myoung Kwan Cho, Kun-Ok Ahn, Yohwan Koh
Publikováno v:
2010 IEEE International Reliability Physics Symposium (IRPS); 2010, p975-976, 2p