Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells

Autor: Lerat, Jean-François, Desrues, Thibaut, Le Perchec, Jérôme, Coig, Marianne, Milesi, Frederic, Mazen, Frédéric, Michel, Thomas, Roux, Laurent, Veschetti, Yannick, Dubois, Sébastien

Publikováno v: In Energy Procedia August 2016 92:697-701

Erbium implanted silicon rich oxide thin films suitable for slot waveguides applications

Autor: Prtljaga, Nikola, Navarro-Urrios, Daniel, Marconi, Alessandro, Anopchenko, Aleksei, Colonna, Jean-Philippe, Milesi, Frédéric, Daldosso, Nicola, Jambois, Olivier, Garrido, Blas, Fedeli, Jean-Marc, Pavesi, Lorenzo

Publikováno v: In Optical Materials 2011 33(7):1083-1085

4H-SiC P+N UV Photodiodes for Space Applications

Autor: Berenguier, B., Ottaviani, Laurent, Biondo, Stéphane, Lazar, Mihai, Milesi, Frédéric, Palais, Olivier, Torregrosa, Frank, Lyoussi, A., Kalinina, Evgenia, Lebedev, A.

Publikováno v: Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.644-647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩
Materials Science Forum, 2015, 821-823, pp.644-647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩

International audience; Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion impl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0450da35a6271629921809dc93ea2caf
https://hal.archives-ouvertes.fr/hal-01391847

4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Autor: Biondo, Stéphane, Ottaviani, Laurent, Lazar, Mihai, Planson, Dominique, Duchaine, Julian, Le Borgne, V., Khakani, M A, Milesi, Frédéric, Vervisch, Wilfried, Palais, Olivier, Torregrosa, Frank

Publikováno v: Materials Science Forum
Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩
Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩

International audience; This paper presents a study of 4H-SiC UV photodetectors based on p + n thin junctions. Two kinds of p + layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ea313695cea94c726db61d9207371c18
https://hal.science/hal-02275699/file/rev91.pdf

Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

Autor: Ottaviani, Laurent, Biondo, Stéphane, Lazar, Mihai, Vervisch, Wilfried, Duchaine, Julian, Milesi, Frédéric, Palais, Olivier, Planson, Dominique, Torregrosa, Frank

Publikováno v: Proceedings of the 35th Workshop on Compound SemiconductorDevices and Integrated Circuits
WOCSDICE
WOCSDICE, May 2011, Catania, Italy. pp.181

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a2ac9573c1da88c49694f3cf2cc7e275
https://hal.archives-ouvertes.fr/hal-00661522