Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Milene Galeti"'
Autor:
Rafael Serralvo Neto, Joao Bruno Palermo, Renato Giacomini, Michele Rodrigues, Fabio Delatore, Giovana Betoni Rossi, Milene Galeti, Rudolf Theoderich Bühler
Publikováno v:
World Electric Vehicle Journal, Vol 14, Iss 7, p 183 (2023)
Electric vehicles (EVs) enable the integration of powertrains with multiple motors, allowing for the adjustment of torque delivered to each wheel. This approach permits the implementation of torque vectoring techniques (TV) to enhance the vehicle’s
Externí odkaz:
https://doaj.org/article/863aeb494364459cb833347a42d9c28b
Autor:
Milene Galeti
Publikováno v:
Biblioteca Digital de Teses e Dissertações da USPUniversidade de São PauloUSP.
Este trabalho apresenta um estudo sobre o transitório da corrente de dreno e métodos de extração de tempo de vida de geração em transistores SOI MOSFETs parcialmente depletados de porta simples, porta dupla e FinFETs de porta tripla. Este estud
Publikováno v:
Journal of Integrated Circuits and Systems. 11:132-139
This paper proposes a new and refined bio-amplifier design, which associates DC offset cancellation, adequate frequency response and buffered outputs to a significant reduction of the signal recovery time. A MOS-Bipolar pseudo-resistor integrated to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08a970f7692d7650173206bce971c7c3
https://doi.org/10.29292/jics.v11i2.437
https://doi.org/10.29292/jics.v11i2.437
Autor:
Nadine Collaert, Milene Galeti, Joao Antonio Martino, Eddy Simoen, Cor Claeys, Michele Rodrigues
Publikováno v:
Journal of Integrated Circuits and Systems. 7:107-112
This work presents an analysis of SOI p- and nMuGFET devices with different TiN metal gate electrode thickness for rotated and standard structures.Thinner TiN metal gate allows achieving a higher intrinsic voltage gain in spite of the reduced variati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09f3474c651b585d7fed96bbe1ac253c
https://doi.org/10.29292/jics.v7i2.362
https://doi.org/10.29292/jics.v7i2.362
Autor:
Michele Rodrigues, Eddy Simoen, Cor Claeys, Milene Galeti, Nadine Collaert, Joao Antonio Martino
Publikováno v:
Scopus-Elsevier
This work presents an analysis of the analog performance of SOI MuGFET devices and the impact of different TiN metal gate electrode thickness.Thinner TiN metal gate allows achieving large gain and this effect can be attributed to the increased Early
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f4029274c41b48b48c2635991ca0710
https://doi.org/10.29292/jics.v6i2.345
https://doi.org/10.29292/jics.v6i2.345
Autor:
João Batista Junior, Arianne Pereira, Rudolf Buhler, André Perin, Carla Novo, Milene Galeti, Juliano Oliveira, Renato Giacomini
Publikováno v:
Microelectronics Journal. 120:105337
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c40ed8c586c90bc216e3175958b8bf6
https://doi.org/10.1016/j.mejo.2021.105337
https://doi.org/10.1016/j.mejo.2021.105337
Autor:
R. T. Buhler, Julio C. Lucchi, Pedro L. Benko, Cleiton F. Pereira, Milene Galeti, Renato Giacomini, Beatriz Barsocchi Testa
Publikováno v:
Semiconductor Science and Technology. 36:015019
This work presents the experimental temperature dependence evaluation of the pseudo-resistor piecewise linear (PWL) macromodel, for temperature ranging from 300 to 333 K. The studied macromodel is based on the PWL methodology and it can be used for p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf3fa93d9010fa861ade9bebbe08129
https://doi.org/10.1088/1361-6641/abc784
https://doi.org/10.1088/1361-6641/abc784
Publikováno v:
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro).
This paper characterizes experimentally the non-linearity of MOSFET pseudo-resistors and proposes an accurate and simple model to be implemented into SPICE simulators. The work is based in an indirect measure of the resistance, due to its high value.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e72ad3a2edfc06568c8bcfdd14a879b0
https://doi.org/10.1109/sbmicro.2017.8112999
https://doi.org/10.1109/sbmicro.2017.8112999
Autor:
Pedro L. Benko, R. T. Buhler, Cleiton F. Pereira, Renato Giacomini, Julio C. Lucchi, Milene Galeti
Publikováno v:
Semiconductor Science and Technology. 34:075032
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12bf8f60ea1d865d41689f0eabe1c6a2
https://doi.org/10.1088/1361-6641/ab2784
https://doi.org/10.1088/1361-6641/ab2784
Autor:
Eddy Simoen, Victor Sonnenberg, Joao Antonio Martino, Milene Galeti, Marc Aoulaiche, C. Claeys
Publikováno v:
ECS Transactions. 50:225-236
This paper presents the main transistor-based extraction methods for the carrier lifetime and the interface trap density in Silicon-On-Insulator materials. The device/technology under analysis begins with the partially-depleted SOI MOSFET, following
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ded2732b09a9575e45f35b2e4b66752
https://doi.org/10.1149/05005.0225ecst
https://doi.org/10.1149/05005.0225ecst