Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Milena, De Albuquerque Moreira"'
Publikováno v:
Micromachines, Vol 11, Iss 2, p 113 (2020)
We have developed a fast and simple method for fabricating microfluidic channels in silicon using direct laser writing. The laser microfabrication process was optimised to generate microfluidic channels with vertical walls suitable for acoustic parti
Externí odkaz:
https://doaj.org/article/326589cdf72843aea6b40f6cdef60615
Autor:
Pushparani, Micheal Raj, Laurent, Barbe, Martin, Andersson, Milena, De Albuquerque Moreira, Dörthe, Haase, James, Wootton, Susan, Nehzati, Ann E, Terry, Ross J, Friel, Maria, Tenje, Kajsa G V, Sigfridsson Clauss
Publikováno v:
RSC advances. 11(47)
Some of the most fundamental chemical building blocks of life on Earth are the metal elements. X-ray absorption spectroscopy (XAS) is an element-specific technique that can analyse the local atomic and electronic structure of, for example, the active
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a51b96dac56742bd8ca8f01d278cfc64
https://pubmed.ncbi.nlm.nih.gov/35479529
https://pubmed.ncbi.nlm.nih.gov/35479529
Publikováno v:
physica status solidi c. 9:1427-1430
Titanium nitride (TiN) films have been grown on Si (100) substrates by DC. reactive magnetron sputtering from a titanium (Ti) metallic target at different nitrogen partial pressures (80–10 sccm) and different power (500–1500 W). The effects of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d16b7b0198f51eedd2f48d896b69bd
https://doi.org/10.1002/pssc.201100506
https://doi.org/10.1002/pssc.201100506
Autor:
Jose Lino Gonçalves, Milena de Albuquerque Moreira, Ioshiaki Doi, Peter Jurgen Tatsch, J. F. Souza, José Alexandre Diniz
Publikováno v:
physica status solidi c. 9:1454-1457
Preparation and characterization of high-k aluminium nitride (AlN) thin film for sensor and integrated circuits applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da766b1de2abd51a359a88ec238bae8
https://doi.org/10.1002/pssc.201100461
https://doi.org/10.1002/pssc.201100461
Publikováno v:
Microelectronic Engineering. 88:802-806
Aluminum nitride (AlN) films were deposited by dc reactive magnetron sputtering on p-Si-(100) substrate in Ar-N"2 gas mixtures. The effects of nitrogen concentration and sputtering power on AlN films deposition rate, crystallographic orientation, ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0ddfc59909e926a6bb1deee2ca92718
https://doi.org/10.1016/j.mee.2010.06.045
https://doi.org/10.1016/j.mee.2010.06.045
The requirements of the consumer market on high frequency devices have been more and more demanding over the last decades. Thus, a continuing enhancement of the devices’ performance is required in order to meet these demands. In a macro view, chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b8163a32711c9ac4d9d4471d20bce4f
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-229588
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-229588
