Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Milekhin IA"'
Autor:
Kumar N; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia. kumar@isp.nsc.ru.; Tomsk State University, 36 Lenin Ave., Tomsk, 634050, Russia., Ishchenko DV; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia. kumar@isp.nsc.ru., Milekhin IA; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia. kumar@isp.nsc.ru.; Novosibirsk State University, Novosibirsk, 630090, Russia., Yunin PA; Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.; Faculty of Radiophysics, Lobachevsky State University, Nizhny Novgorod 603950, Russia., Kyrova ED; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia. kumar@isp.nsc.ru.; Novosibirsk State Technical University, Novosibirsk, 630073, Russia., Korsakov AV; V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, 630090, Russia., Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia. kumar@isp.nsc.ru.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB, RAS, Koltsovo 630559, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 Nov 18. Date of Electronic Publication: 2024 Nov 18.
Autor:
Kumar N; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia. kumar@isp.nsc.ru.; Faculty of Physics, Tomsk State University, 36 Lenin Ave., Tomsk 634050, Russia., Surovtsev NV; Institute of Automation and Electrometry, SB, RAS, Novosibirsk, 630090, Russia., Yunin PA; Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.; Faculty of Radiophysics, Lobachevsky State University, Nizhny Novgorod 603950, Russia., Ishchenko DV; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia. kumar@isp.nsc.ru., Milekhin IA; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia. kumar@isp.nsc.ru.; Novosibirsk State University, Novosibirsk, 630090, Russia., Lebedev SP; Ioffe Institute, 194021 St. Petersburg, Russia., Lebedev AA; Ioffe Institute, 194021 St. Petersburg, Russia., Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia. kumar@isp.nsc.ru.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB, RAS, Koltsovo 630559, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 May 01; Vol. 26 (17), pp. 13497-13505. Date of Electronic Publication: 2024 May 01.
Autor:
Kurus NN; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru., Kalinin V; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Milekhin IA; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Antonova IV; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Rodyakina EE; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Milekhin AG; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru., Latyshev AV; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Zahn DRT; Semiconductor Physics and Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology Reichenhainer Str. 70 D-09107 Chemnitz Germany zahn@physik.tu-chemnitz.de.
Publikováno v:
RSC advances [RSC Adv] 2024 Jan 23; Vol. 14 (6), pp. 3667-3674. Date of Electronic Publication: 2024 Jan 23 (Print Publication: 2024).
Autor:
Cheng Y; Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia., Bulgakov AV; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic., Bulgakova NM; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic., Beránek J; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic.; Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, 12001 Prague, Czech Republic., Zukerstein M; HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Za Radnicí 828, 25241 Dolní Břežany, Czech Republic., Milekhin IA; Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia.; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentiev Ave, 13, Novosibirsk 630090, Russia., Popov AA; Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl 150007, Russia., Volodin VA; Physics Department, Novosibirsk State University, Pirogova Street, 2, Novosibirsk 630090, Russia.; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentiev Ave, 13, Novosibirsk 630090, Russia.
Publikováno v:
Micromachines [Micromachines (Basel)] 2023 Oct 31; Vol. 14 (11). Date of Electronic Publication: 2023 Oct 31.
Autor:
Milekhin IA; Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.; Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany., Milekhin AG; Novosibirsk State University, 630090 Novosibirsk, Russia.; A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia., Zahn DRT; Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany.; Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107 Chemnitz, Germany.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 Jun 26; Vol. 12 (13). Date of Electronic Publication: 2022 Jun 26.
Autor:
Milekhin IA; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany., Anikin KV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Rahaman M; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany., Rodyakina EE; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Duda TA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Saidzhonov BM; Department of Chemistry, Moscow State University, Moscow, Russia., Vasiliev RB; Department of Chemistry, Moscow State University, Moscow, Russia., Dzhagan VM; V.E. Lashkaryov Institute of Semiconductor Physics, UA-03028 Kiev, Ukraine., Milekhin AG; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Batsanov SA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Gutakovskii AK; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Latyshev AV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Zahn DRT; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany.
Publikováno v:
The Journal of chemical physics [J Chem Phys] 2020 Oct 28; Vol. 153 (16), pp. 164708.
Autor:
Milekhin IA; Semiconductor Physics, Chemnitz University of Technology D-09107 Chemnitz Germany ilya.milekhin@physik.tu-chemnitz.de., Rahaman M; Semiconductor Physics, Chemnitz University of Technology D-09107 Chemnitz Germany ilya.milekhin@physik.tu-chemnitz.de., Anikin KV; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Rodyakina EE; Novosibirsk State University Novosibirsk Russia.; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Duda TA; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Saidzhonov BM; Department of Chemistry, Moscow State University Moscow Russia.; Department of Material Science, Moscow State University Moscow Russia., Vasiliev RB; Department of Chemistry, Moscow State University Moscow Russia.; Department of Material Science, Moscow State University Moscow Russia., Dzhagan VM; V.E. Lashkaryov Institute of Semiconductor Physics UA-03028 Kiev Ukraine., Milekhin AG; Novosibirsk State University Novosibirsk Russia.; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Latyshev AV; Novosibirsk State University Novosibirsk Russia.; A.V. Rzhanov Institute of Semiconductor Physics Novosibirsk Russia., Zahn DRT; Semiconductor Physics, Chemnitz University of Technology D-09107 Chemnitz Germany ilya.milekhin@physik.tu-chemnitz.de.
Publikováno v:
Nanoscale advances [Nanoscale Adv] 2020 Oct 07; Vol. 2 (11), pp. 5441-5449. Date of Electronic Publication: 2020 Oct 07 (Print Publication: 2020).
Autor:
Milekhin AG; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Kuznetsov SA; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia.; Rzhanov Institute of Semiconductor Physics RAS, Novosibirsk Branch 'TDIAM', Lavrentiev Ave. 2/1, Novosibirsk 630090, Russia., Milekhin IA; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Sveshnikova LL; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Duda TA; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Rodyakina EE; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Latyshev AV; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia.; Novosibirsk State University, Pirogov 2, 630090 Novosibirsk, Russia., Dzhagan VM; V. E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Prospekt Nauky 41, 03028 Kyiv, Ukrain., Zahn DRT; Semiconductor Physics, Technische Universitaet Chemnitz, 09126, Chemnitz, Germany.
Publikováno v:
Beilstein journal of nanotechnology [Beilstein J Nanotechnol] 2018 Oct 05; Vol. 9, pp. 2646-2656. Date of Electronic Publication: 2018 Oct 05 (Print Publication: 2018).
Autor:
Milekhin AG; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Cherkasova O; Novosibirsk State University, Novosibirsk, 630090, Russia.; Institute of Laser Physics of SB RAS, Novosibirsk, 630090, Russia., Kuznetsov SA; Novosibirsk State University, Novosibirsk, 630090, Russia.; A.V. Rzhanov Institute of Semiconductor Physics RAS, Novosibirsk Branch 'TDIAM', Lavrentiev Ave. 2/1, Novosibirsk, 630090, Russia., Milekhin IA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Rodyakina EE; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Latyshev AV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Banerjee S; Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany., Salvan G; Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany., Zahn DRT; Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany.
Publikováno v:
Beilstein journal of nanotechnology [Beilstein J Nanotechnol] 2017 May 03; Vol. 8, pp. 975-981. Date of Electronic Publication: 2017 May 03 (Print Publication: 2017).
Autor:
Milekhin IA; Novosibirsk State University, Pirogov 2, 630090, Novosibirsk, Russia; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090, Novosibirsk, Russia., Kuznetsov SA; Novosibirsk State University, Pirogov 2, 630090, Novosibirsk, Russia; Rzhanov Institute of Semiconductor Physics RAS, Novosibirsk Branch 'TDIAM', Lavrentiev Ave. 2/1, Novosibirsk, 630090, Russia., Rodyakina EE; Novosibirsk State University, Pirogov 2, 630090, Novosibirsk, Russia; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090, Novosibirsk, Russia., Milekhin AG; Novosibirsk State University, Pirogov 2, 630090, Novosibirsk, Russia; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090, Novosibirsk, Russia., Latyshev AV; Novosibirsk State University, Pirogov 2, 630090, Novosibirsk, Russia; Rzhanov Institute of Semiconductor Physics RAS, Lavrentiev Ave. 13, 630090, Novosibirsk, Russia., Zahn DR; Semiconductor Physics, Technische Universität Chemnitz, Chemnitz, Germany.
Publikováno v:
Beilstein journal of nanotechnology [Beilstein J Nanotechnol] 2016 Oct 26; Vol. 7, pp. 1519-1526. Date of Electronic Publication: 2016 Oct 26 (Print Publication: 2016).