Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Milan Tapajna"'
Autor:
Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan Ťapajna
Publikováno v:
Materials, Vol 16, Iss 1, p 20 (2022)
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Externí odkaz:
https://doaj.org/article/e5f936cc37314fd888339a03ebf4802b
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 265-268 (2004)
High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination fo
Externí odkaz:
https://doaj.org/article/358d28fe8862451bac6f68c3af4fdde7
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 269-272 (2004)
The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has
Externí odkaz:
https://doaj.org/article/bfb96ccf49ac472c91c7709cfb9ec855
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 334-336 (2006)
The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the tr
Externí odkaz:
https://doaj.org/article/7d8c46618c85487f989907aff5f763b5
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 305-307 (2004)
The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a metal-oxide-semiconductor capacitors (MOS-C). From the low- (If) and high-frequency (hf) capacita
Externí odkaz:
https://doaj.org/article/6e22d461a0ad4fff96af0b260be15c49
Autor:
Dagmar Gregusova, Ondrej Pohorelec, Milan Tapajna, Michal Blaho, Filip Gucmann, Roman Stoklas, Stanislav Hasenohrl, Agata Laurencikova, Peter Sichman, Stefan Hascik, Jan Kuzmik
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Autor:
Martin Klimo, Milan Tapajna, Ondrej Such, M. Blaho, Ondrej Skvarek, M. Precner, Ivan Kundrata, Karol Fröhlich
Publikováno v:
MRS Advances. 3:3427-3432
In our contribution we present and analyze implementation of the resistive switching structures for logic application based on Zadeh fuzzy logic. Resistive switching structures based on HfOx and TaOx were connected in an anti-serial configuration (co
Autor:
Miroslav Mikolášek, Ladislav Harmatha, Milan Tapajna, Vlastimil Rehacek, Karol Fröhlich, Juraj Racko
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
The impact of post-deposition annealing of silicon based metal-insulator-semiconductor structures with SiO 2 /TiO 2 dielectric layers is inspected by means of electrical characterisation. It is shown that annealing at 400 °C in the forming gas resul
Autor:
Karol Fröhlich, Boris Hudec, Milan Tapajna, Kristina Hušeková, Alica Rosová, Jaan Aarik, Raul Rammula, Aarne Kasikov, Tonis Arroval, Katsuhisa Murakami, Mathias Rommel, Anton J. Bauer
Publikováno v:
ECS Meeting Abstracts. :2463-2463
not Available.
Autor:
Martin Kuball, James W. Pomeroy, Milan Tapajna, Nicole Killat, Athikom Manoi, Michael J. Uren, Mustapha Faqir
Publikováno v:
ECS Meeting Abstracts. :2184-2184
not Available.