Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Milan Ťapajna"'
Autor:
Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan Ťapajna
Publikováno v:
Materials, Vol 16, Iss 1, p 20 (2022)
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Externí odkaz:
https://doaj.org/article/e5f936cc37314fd888339a03ebf4802b
Autor:
Milan Ťapajna
Publikováno v:
Crystals, Vol 10, Iss 12, p 1153 (2020)
GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented performance in terms of power, frequency, and efficiency. Application of metal-insulator-semiconductor (MIS) gate structure has enabled further development of these devic
Externí odkaz:
https://doaj.org/article/bb6115fd7a764ba98feb378e69d5850f
Autor:
Andrii Kozak, Monika Hofbauerová, Yuriy Halahovets, Lenka Pribusová-Slušná, Marián Precner, Matej Mičušík, L’ubomír Orovčík, Martin Hulman, Anastasiia Stepura, Mária Omastová, Peter Šiffalovič, Milan Ťapajna
Publikováno v:
ACS Applied Materials & Interfaces. 14:36815-36824
Autor:
Peter Šichman, Roman Stoklas, Stanislav Hasenöhrl, Dagmar Gregušová, Milan Ťapajna, Boris Hudec, Štefan Haščík, Tamotsu Hashizume, Aleš Chvála, Alexander Šatka, Ján Kuzmík
Publikováno v:
physica status solidi (a).
Autor:
Andrii Kozak, Michaela Sojkova, Filip Gucmann, Michal Bodík, Karol Végso, Edmund Dobrocka, Igor Píš, Federica Bondino, Martin Hulman, Peter Šiffalovič, Milan Ťapajna
Publikováno v:
Applied Surface Science
Two-dimensional (2D) transition metal dichalcogenides are potential candidates for ultrathin solid-state lubricants in low-dimensional systems owing to their flatness, high in-plane mechanical strength, and low shear interlayer strength. Yet, the eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ffc6333b001970ef9d3e86d230eae86
http://arxiv.org/abs/2209.09128
http://arxiv.org/abs/2209.09128
Autor:
Filip Gucmann, Peter Nádaždy, Kristína Hušeková, Edmund Dobročka, Juraj Priesol, Fridrich Egyenes, Alexander Šatka, Alica Rosová, Milan Ťapajna
Publikováno v:
Materials Science in Semiconductor Processing. 156:107289
Autor:
Ladislav Harmatha, Milan Ťapajna
Publikováno v:
Solid-State Electronics. 48:2339-2342
A comparison between two linear sweep techniques for generation lifetime profiling is reviewed here. These semiconductor characterization techniques find widespread application because of their availability in commercial equipment and ability to redu
Autor:
Johannes Lindner, Roman Lupták, U. Weber, Kristína Hušeková, Karol Fröhlich, Peter Baumann, Milan Ťapajna
Publikováno v:
Defects in High-k Gate Dielectric Stacks ISBN: 1402043651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0c39f578b331171b20587099397a5b
https://doi.org/10.1007/1-4020-4367-8_22
https://doi.org/10.1007/1-4020-4367-8_22
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 265-268 (2004)
High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination fo
Externí odkaz:
https://doaj.org/article/358d28fe8862451bac6f68c3af4fdde7
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 269-272 (2004)
The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has
Externí odkaz:
https://doaj.org/article/bfb96ccf49ac472c91c7709cfb9ec855