Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Miklos Csontos"'
Autor:
Mila Lewerenz, Elias Passerini, Luca Weber, Markus Fischer, Nadia Jimenez Olalla, Raphael Gisler, Alexandros Emboras, Mathieu Luisier, Miklos Csontos, Ueli Koch, Juerg Leuthold
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 12, Pp n/a-n/a (2024)
Abstract The human brain facilitates information processing via generating and receiving temporal patterns of short voltage pulses, a.k.a. neural spikes. This approach simultaneously grants low‐power operation as well as a high degree of noise immu
Externí odkaz:
https://doaj.org/article/05c50df911594dbca77baa8224167707
Autor:
Fabian Ducry, Dominic Waldhoer, Theresia Knobloch, Miklos Csontos, Nadia Jimenez Olalla, Juerg Leuthold, Tibor Grasser, Mathieu Luisier
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-10 (2022)
Abstract Two-dimensional materials have been widely investigated to implement memristive devices for data storage or neuromorphic computing applications because of their ultra-scaled thicknesses and clean interfaces. For example, resistance switching
Externí odkaz:
https://doaj.org/article/b5f0f2941d84422d9bc5ba6417e6d7f8
Autor:
Miklós Csontos, Yannik Horst, Nadia Jimenez Olalla, Ueli Koch, Ivan Shorubalko, András Halbritter, Juerg Leuthold
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling pote
Externí odkaz:
https://doaj.org/article/d7c71b44d2e445039fac967ca64ecbcd
Autor:
László Pósa, Zoltán Balogh, Dávid Krisztián, Péter Balázs, Botond Sánta, Roman Furrer, Miklós Csontos, András Halbritter
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
Abstract Graphene nanogaps are considered as essential building blocks of two-dimensional electronic circuits, as they offer the possibility to interconnect a broad range of atomic-scale objects. Here we provide an insight into the microscopic proces
Externí odkaz:
https://doaj.org/article/e5cefa9a947d4a70bde4bfa82450cec2
Autor:
Botond Sánta, Dániel Molnár, Patrick Haiber, Agnes Gubicza, Edit Szilágyi, Zsolt Zolnai, András Halbritter, Miklós Csontos
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)
Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high op
Externí odkaz:
https://doaj.org/article/0c34efc4831b4a308e698a06dc25726a