Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Mikko A. Juntunen"'
Autor:
Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele I. Savin, Mikko A. Juntunen
Publikováno v:
Optical Components and Materials XIX.
Publikováno v:
IEEE Transactions on Electron Devices. 67:1645-1652
Black silicon (b-Si) has improved the performance of solar cells and photodetectors due to the excellent optics and surface passivation achieved with atomic layer deposition (ALD) dielectric films. One major reason for the success is the strong field
Autor:
Mikko A. Juntunen, Juha Heinonen, Michael Serué, Antti Haarahiltunen, Ville Vähänissi, Daria Kriukova, Toni P. Pasanen, Hele Savin
Publikováno v:
Optical Components and Materials XVIII.
A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a
Autor:
Heikki Kettunen, Mikko A. Juntunen, Hele Savin, Mikko Rossi, Juha Heinonen, Jukka Jaatinen, J. Heino, Antti Haarahiltunen
Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e11e28d678605c027425d61de48ec330
http://hdl.handle.net/10138/355287
http://hdl.handle.net/10138/355287
Autor:
Lutz Werner, M. Garín, Hele Savin, Toni P. Pasanen, Antti Haarahiltunen, Juha Heinonen, Ville Vähänissi, Mikko A. Juntunen
Publikováno v:
Physical Review Letters. 125
At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is surprisingly poor. He
Autor:
Ville Vähänissi, Antti Haarahiltunen, Lutz Werner, Michael Serué, Juha Heinonen, Hele Savin, Mikko A. Juntunen, Toni P. Pasanen
Publikováno v:
Optical Components and Materials XVII.
There is an increasing demand for highly sensitive near infrared (NIR) detectors due to many rapidly growing application areas, such as LiDAR and optical communications. Despite the limited NIR absorption, silicon is a common substrate material in NI
Publikováno v:
Nature Photonics. 10:777-781
The combination of black silicon to improve the light absorption and negatively charged alumina to form an induced collecting junction characterizes a photodiode with external quantum efficiency above 96% between 250 nm and 950 nm.
Autor:
Jukka Jaatinen, Mikko Rossi, Antti Haarahiltunen, Juha Heinonen, C. Modanese, Mikko A. Juntunen, Heikki Kettunen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 977:164294
The stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si) for protons and electrons, respectively.
Autor:
M. Merimaa, Meelis Sildoja, Chi Kwong Tang, Mikko A. Juntunen, Mika Prunnila, Jarle Gran, Farshid Manoocheri, Esa Tuovinen, Maria Luisa Rastello, Alicia Pons, Ingmar Müller, Péter Gál, Erkki Ikonen, Marek Smid, Giorgio Brida, L. Lolli, Timo Dönsberg, Hannu Ronkainen, Hele Savin, B. Rougié, Lutz Werner
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Dönsberg, T, Manoocheri, F, Sildoja, M, Juntunen, M, Savin, H, Tuovinen, E, Ronkainen, H, Prunnila, M, Merimaa, M, Tang, C K, Gran, J, Müller, I, Werner, L, Rougié, B, Pons, A, Smîd, M, Gál, P, Lolli, L, Brida, G, Rastello, M L & Ikonen, E 2017, ' Predictable quantum efficient detector based on n-type silicon photodiodes ', Metrologia, vol. 54, no. 6, pp. 821-836 . https://doi.org/10.1088/1681-7575/aa85ed
instname
Dönsberg, T, Manoocheri, F, Sildoja, M, Juntunen, M, Savin, H, Tuovinen, E, Ronkainen, H, Prunnila, M, Merimaa, M, Tang, C K, Gran, J, Müller, I, Werner, L, Rougié, B, Pons, A, Smîd, M, Gál, P, Lolli, L, Brida, G, Rastello, M L & Ikonen, E 2017, ' Predictable quantum efficient detector based on n-type silicon photodiodes ', Metrologia, vol. 54, no. 6, pp. 821-836 . https://doi.org/10.1088/1681-7575/aa85ed
Timo Dönsberg et al. -- 16 pags., 16 figs., 4 tabs. -- Open Access funded by Creative Commons Atribution Licence 3.0
The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in
The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in
Autor:
Hele Savin, Päivikki Repo, Anna Vaskuri, Mikko A. Juntunen, Juha Heinonen, Ville Vähänissi, Hannu S. Laine
Publikováno v:
SPIE Proceedings.
Commercial photodiodes suffer from reflection losses and different recombination losses that reduce the collection efficiency. Recently, we realized a near-ideal silicon photodiode that exhibits an external quantum efficiency above 95% over the wavel