Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mikio Tsujiuchi"'
Autor:
Mikio Tsujiuchi, Makoto Yabuuchi, Takashi Ipposhi, Yuuichi Hirano, Koji Nii, Yasumasa Tsukamoto, Takashi Terada, Kozo Ishikawa, Yukio Maki, Shigeki Obayashi, Katsumi Eikyu, Toshiaki Iwamatsu, Yasuo Inoue, Hirofumi Shinohara, T. Uchida, Hidekazu Oda
Publikováno v:
Japanese Journal of Applied Physics. 47:2092-2096
This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of static random access memory (SRAM). For the first time, significant enhancement of static noise margin (SNM) is su
Autor:
Toshiaki Iwamatsu, Shigeto Maegawa, Y. Inoue, Yukio Maki, Yasumasa Tsukamoto, A. Miyanishi, Yuichiro Ishii, Hidekazu Oda, Yuuichi Hirano, Koji Nii, Mikio Tsujiuchi, Takashi Ipposhi
Publikováno v:
IEEE Transactions on Electron Devices. 55:365-371
An actively body-bias controlled (ABC) silicon-on-insulator (SOI) static random access memory (SRAM) connecting the bodies of the access and the driver transistors with the word line is proposed to realize high-speed and low-voltage operation. We dev
Autor:
S. Maegawa, Mikio Tsujiuchi, Hiroshi Umeda, T. Ipposhi, Yasuo Inoue, T. Iwamatsu, Hideki Naruoka
Publikováno v:
Applied Surface Science. 216:329-333
To investigate the gate oxide integrity for the silicon-on-insulator (SOI) wafer, we evaluated the time-dependent dielectric breakdown (TDDB) characteristic of gate oxide formed on SOI wafer with gate oxide thickness (T o x ) as a parameter. The TDDB
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper, an ideal lateral insulated gate bipolar transistor (LIGBT) using 0.25μm Silicon-on-insulator (SOI) BiC-DMOS process has been presented. We achieved the significant improvement of the 200V n-type LIGBT (n-LIGBT) current capability by a
Autor:
Koyu Asai, Shuichi Ueno, Ryoji Matsuda, Mikio Tsujiuchi, Yosuke Takeuchi, Masazumi Matsuura, Y. Miyagawa, Tatsunori Murata
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Autor:
Mikio Tsujiuchi, Makoto Yabuuchi, Hidekazu Oda, Takashi Terada, Yukio Maki, Y. Inoue, K. Ishikawa, T. Uchida, Takashi Ipposhi, Yasumasa Tsukamoto, Toshiaki Iwamatsu, Katsumi Eikyu, Shigeki Obayashi, Hirofumi Shinohara, Yuuichi Hirano, Koji Nii
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of SRAMs. Significant enhancement of static noise margin (SNM) is successfully realized by using a body bias of load
Autor:
Yuzuru Ohji, Takashi Ipposhi, Toshiaki Iwamatsu, Shigeto Maegawa, Yuuichi Hirano, Mikio Tsujiuchi, M. Inuishi
Publikováno v:
International Meeting for Future of Electron Devices, 2004..
As the LSI process technology advances, increase of power consumption for the LSIs becomes major issue because of number of transistors and clock frequencies increase. For a reduction of the power consumption of the LSI, lowering supply voltage techn
Autor:
Yuuichi Hirano, Y. Inoue, Yukio Maki, Takashi Ipposhi, O. Ozawa, Toshiaki Iwamatsu, Mikio Tsujiuchi
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Autor:
Yoshihiro Miyagawa, Masayuki Kojima, Koyu Asai, Masazumi Matsuura, Yosuke Takeuchi, Ryoji Matsuda, Ryuichiro Isaki, Tatsunori Murata, Toshinori Shibata, Shuichi Ueno, Mikio Tsujiuchi
Publikováno v:
Japanese Journal of Applied Physics. 48:04C024
The effects of plasma and precursors during low-temperature silicon nitride (LT-SiN) film deposition on the magnetic properties of a CoFeB alloy layer, which is one magnetic material in a magnetic tunnel junction (MTJ) in magnetoresistive random acce