Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mikio Nonaka"'
Publikováno v:
Journal of the Japan Landslide Society. 41:111-120
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b039f3330c3e05f5da1c5aa3864ac8c7
https://doi.org/10.3313/jls.41.111
https://doi.org/10.3313/jls.41.111
Autor:
Yoshihisa Kase, Yoshinori Iino, Tomoaki Yoshimori, Makoto Karyu, Hirotsugu Ita, Makoto Muto, Mikio Nonaka, Munenori Iwami
Publikováno v:
SPIE Proceedings.
We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce6949ac0b1b5743c9bc9fa4af9275f
https://doi.org/10.1117/12.1000107
https://doi.org/10.1117/12.1000107
Publikováno v:
Doboku Gakkai Ronbunshu. 1994:21-29
流域の宅地開発に伴うピーク流量の増大を抑制するために雨水貯留施設が設置されている. 雨水貯留施設は都市河川の基本高水の一部を担う治水施設として位置づけられており, 流出抑制
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::943c0feff0cb8c9a7ad35ce3ba1d41c3
https://doi.org/10.2208/jscej.1994.497_21
https://doi.org/10.2208/jscej.1994.497_21
Autor:
Mikio Nonaka, Kensuke Demura, Kikuchi Tsutomu, Yoshiaki Kurokawa, Yuji Nagashima, Takahiko Wakatsuki, Haruka Nakano
Publikováno v:
SPIE Proceedings.
Any cleaning technology for state-of-the-art photo masks requires that pattern damage does not occur and optical characteristics do not change. Particularly with EUV masks, an important challenge is to suppress/prevent changes to the optical characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ffd79d42dae028ac9718875eb7365a2
https://doi.org/10.1117/12.899281
https://doi.org/10.1117/12.899281
Autor:
Makoto Karyu, Hirotsugu Ita, Makoto Muto, Yoshinori Iino, Tomoaki Yoshimori, Hidehito Azumano, Mikio Nonaka
Publikováno v:
SPIE Proceedings.
ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe3245585b4a1bdc89b7ab2819d5830
https://doi.org/10.1117/12.898976
https://doi.org/10.1117/12.898976
Autor:
Makoto Karyu, Hidehito Azumano, Tomoaki Yoshimori, Yoshinori Iino, Mikio Nonaka, Hirotsugu Ita
Publikováno v:
SPIE Proceedings.
When it comes to the absorber etching of EUV (Extreme Ultra-Violet) mask, it is important to understand the mechanism of how a sidewall protection film is formed in the TaBO etching process and TaBN etching process. According to our evaluations, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac244da171b5b00522c17c69aabd944
https://doi.org/10.1117/12.868533
https://doi.org/10.1117/12.868533
Publikováno v:
SPIE Proceedings.
Along with the increased miniaturization of electronic devices, two-fluid cleaning technology is garnering the spotlight as a solution for the manufacturing process of Photomask. This is because it is now known that implementing energy control of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::616474af1abfa44db4e5540041f0dfe5
https://doi.org/10.1117/12.830602
https://doi.org/10.1117/12.830602
Publikováno v:
Doboku Gakkai Ronbunshu. 2005:791_45-791_58
貯水位昇降を誘因とする地すべり挙動のメカニズムは, 地すべり粘土の力学特性の変化が地下水位の変化と連成するため複雑となり, 十分明らかになっていない. しかし, 地すべりの対策
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08f40afbf1ed01219255066043749ccd
https://doi.org/10.2208/jscej.2005.791_45
https://doi.org/10.2208/jscej.2005.791_45
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