Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Mikio Katsumata"'
Autor:
Koutaro Sho, Mikio Katsumata, Taiki Kimura, Shoji Mimotogi, Tatsuhiko Ema, Seiji Nagahara, Fumikatsu Uesawa, Makoto Tominaga, Hiroki Hane, Hiroharu Fujise, Atsushi Ikegami, Masafumi Asano, Hideki Kanai, M. Iwai
Publikováno v:
SPIE Proceedings.
Immersion lithography was applied to 45nm node logic and 0.25um 2 ultra-high density SRAM. The predictable enhancement of focus margin and resolution were obtained for all levels which were exposed by immersion tool. In particular, the immersion lith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::024f73f27729ff65e39735aaf462d95a
https://doi.org/10.1117/12.711049
https://doi.org/10.1117/12.711049
Autor:
Tomohiro Sugiyama, Suigen Kyoh, Kohji Hashimoto, Shoji Mimotogi, Hideki Kanai, Maki Miyazaki, Eishi Shiobara, Kazuya Sato, Fumikatsu Uesawa, Kazuhiro Takahata, Koutaro Sho, Hiroki Hane, Hiroharu Fujise, Mikio Katsumata
Publikováno v:
Optical Microlithography XVIII.
In 45nm-node CMOS, the k1 value is around 0.35. In the low-k1 lithography, the robust design for lens aberration and process fluctuation such as mask CD error is required for manufacturing. The technologies of robust design for 45nm-node CMOS are pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2dbee629174dc6c5f29b413ad5d0c60
https://doi.org/10.1117/12.600948
https://doi.org/10.1117/12.600948
Publikováno v:
SPIE Proceedings.
Line end shortening (LES) effects and their corrections for ArF attenuated phase shift mask (PSM) technology toward 65 nm node, both in photomask and wafer processes, have been investigated. From critical dimension (CD) measurements on photomasks, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11b28d7c0c759f1a78cdeb9f5f922c1
https://doi.org/10.1117/12.533987
https://doi.org/10.1117/12.533987
Autor:
Mikio Katsumata, Fumikatsu Uesawa, Shinji Omori, Koichi Takeuchi, Hiroichi Kawahira, Masaki Yoshizawa, Kazuhisa Ogawa
Publikováno v:
SPIE Proceedings.
In order to clarify the direction of the lithography for the 45 nm node, the feasibilities of various lithographic techniques for gate, metal, and contact layers are studied by using experimental data and aerial image simulations. The focus and expos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::782a3553821d58da5aad4bf026a663e4
https://doi.org/10.1117/12.535104
https://doi.org/10.1117/12.535104
Publikováno v:
SPIE Proceedings.
The impact of phase defect printability on a wafer in alternating phase shift masks (alt-PSM) was investigated. The Alt-PSM is a promising resolution-enhancement technique for extending optical lithography to a finer design rule. One of the important
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd44e7289c2bd67e61eba2e6c8cdc422
https://doi.org/10.1117/12.504285
https://doi.org/10.1117/12.504285
Publikováno v:
SPIE Proceedings.
We have investigated a new pattern correction method for reducing pattern critical dimension (CD) errors due to a variety of pattern layouts and densities. Together with conventional proximity effect correction and fogging functions in an electron be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c792593b123ad0cac2c25a2c71e8596
https://doi.org/10.1117/12.476964
https://doi.org/10.1117/12.476964
Autor:
Mikio Katsumata, Hiroichi Kawahira
Publikováno v:
SPIE Proceedings.
The newest etching technique, magnetic neutral loop discharge etching (NLDE), is evaluated as a candidate for 130 nm device generation photomask fabrication. In order to ensure the mask etching performances corresponding to the 130nm generation, neut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69d520357d3ba5819396519f5e9e439
https://doi.org/10.1117/12.392027
https://doi.org/10.1117/12.392027
Publikováno v:
SPIE Proceedings.
A next reticle format is considered from a view point of photomask fabrication process. In order to determine optimal reticle thickness corresponding to 230 mm size, processes feasibility for the thickness are examined. Cr dry etching is studied in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb6ceabd7a1e3876a5f9ae10bf6bead0
https://doi.org/10.1117/12.277253
https://doi.org/10.1117/12.277253
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c7ed18c51fc78ae604912f5cc57805e
https://doi.org/10.1117/12.262795
https://doi.org/10.1117/12.262795
Autor:
Keisuke Tsudaka, Mikio Katsumata, Akihiro Ogura, Hiroichi Kawahira, Manabu Tomita, Satoru Nozawa
Publikováno v:
SPIE Proceedings.
A feasibility of optical proximity effect correction (OPC) mask manufacturing with a state of the art mask fabrication processing and systems is demonstrated focusing on the 0.25 μm devices and 4X reticle generation. For realistic OPC mask fabricati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277dc4dd536124f49e85c9abd905512c
https://doi.org/10.1117/12.245218
https://doi.org/10.1117/12.245218