Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Mikio Kamada"'
Publikováno v:
Games for Health Journal. 2:18-23
Objective: A new program using a card game for study of children's food risk communication was developed to meet the needs of learning healthy eating. To examine the effects of the new program, an experiment was carried out in an elementary school wi
Autor:
Mikio Kamada, Masaki Moriyama
A new game that allows the players to reflect and discuss dietary habits, specifically targeting school-aged children, was developed. The game places greater emphasis on reflection and communication than competition and goal pursuit. An assessment ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7a7cefa8e5c92d6f67477b455a8612a
https://doi.org/10.4018/978-1-4666-9522-1.ch020
https://doi.org/10.4018/978-1-4666-9522-1.ch020
Publikováno v:
CyberPsychology & Behavior. 8:401-415
Mediated communication involves a form of intimate partnership where, as in the case of face-to-face intimate relationships, parties have a strong desire to exchange emotion and ensure a connection by way of receiving and responding to personal messa
Publikováno v:
Journal of Applied Physics. 73:4004-4008
AlInAs layers lattice‐matched to InP substrates were grown by atmospheric‐pressure metal‐organic chemical vapor deposition. The residual oxygen concentration determined by secondary ion mass spectrometry ranged from 3×1016 to 3×1019 cm−3, a
Publikováno v:
IEEE Transactions on Electron Devices. 40:1358-1363
A self-aligned WSi gate heterostructure insulated-gate field-effect transistor (HIGFET) with a gate length of 1 mu m was fabricated using an AlInAs/GaInAs heterostructure grown by atmospheric pressure metal-organic chemical vapor deposition (MOCVD).
Publikováno v:
Journal of Applied Physics. 71:3898-3903
The origin of unintentionally introduced n‐type conduction at the interface of epitaxially grown layer‐InP substrate is identified. From the relation between the sheet carrier concentration and the etching depth, an n‐type conducting layer was
Autor:
H. Ishikawa, N. Watanabe, Dieter Bimberg, Mikio Kamada, U. Lienert, J. Böhrer, Marius Grundmann
Publikováno v:
Journal of Crystal Growth. 107:555-560
The conduction band discontinuity ΔEc for In1−xGaxAs/In1−yAlyAs heterostructures has been determined with larger precision than hitherto with ΔEc = (0.75±0.05)δEg for compositions close to the lattice matching condition. This result, which re
Publikováno v:
Solid-State Electronics. 33:999-1003
Electrical properties of alloyed AuGeNi contacts to p-type GaAs were investigated and analyzed as a means to investigate the nature of alloyed AuGeNi contacts to n-type GaAs. Experimental results on the p-type GaAs were analyzed with a parallel
Publikováno v:
Scopus-Elsevier
Aiming to automatically generate video clips based on the viewer's evaluation of movies and TV dramas, the semantic score method, a content evaluation method to obtain quantitative, multiple-viewers' evaluation score for video content, together with
Publikováno v:
Journal of Applied Physics. 73:4724-4726
We observed a strong correlation between sheet carrier concentration in Si planar‐doped AlInAs layers and the flow rate of AsH3 supplied during the doping. The AlInAs layers were grown by metalorganic chemical vapor deposition and were planar doped