Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Mikihiro Kimura"'
Autor:
Hiroshi Koyama, Mikihiro Kimura
Publikováno v:
Journal of Applied Physics. 85:7671-7681
In the thermally grown silicon dioxide (SiO2) films, thermochemical-breakdown and hole-induced-breakdown models are theoretically formulated to explain the external electric-field dependence of time-dependent dielectric breakdown (TDDB) phenomenon. L
Autor:
Tadahiro Ohmi, Mikihiro Kimura
Publikováno v:
Journal of Applied Physics. 80(11):6360-6369
The conduction mechanism and origin of the electrical stress‐induced leakage current (SILC) in thin silicon dioxide (SiO2) films thermally grown on silicon substrate were clarified from various electrical properties. The properties examined consist
Publikováno v:
Journal of Applied Physics. 77:1569-1575
Silicon‐surface microroughness was formed by cleaning cycles of an NH4OH‐H2O2‐H2O solution. Not only the roughness of the silicon surface, but also the roughness of the thermally oxidized surface and that of the surface after the removal of the
Autor:
Mikihiro Kimura
Publikováno v:
Journal of Applied Physics. 73:4388-4395
The generation phenomena and mechanisms of localized interface states at the Si/SiO2 interface, induced by irradiation and post‐irradiation annealing, are investigated by using 60Co γ rays. In a low dose irradiation of less than 1×106 rad, locali
Publikováno v:
Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials.
Autor:
Mikihiro Kimura, Tadahiro Ohmi
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Autor:
Mikihiro Kimura, Tadahiro Ohmi
Publikováno v:
Japanese Journal of Applied Physics. 35:1478
A complete hole-induced breakdown model suggests that the intrinsic oxide breakdown under an optimal low-field operation lifetime is not a critical limitation in thin oxide films (30–180 Å). Also, buildup of the oxide trapped charges and generatio
Publikováno v:
Japanese Journal of Applied Physics. 30:3634
The effect of low temperature hydrogen annealing (LTHA) in reducing the generation current at the local oxidation of silicon (LOCOS) isolation edge can be successfully investigated by C-t measurement of metal-oxide-semiconductor (MOS) capacitors with
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