Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Mikihiro Kimura"'
Autor:
Hiroshi Koyama, Mikihiro Kimura
Publikováno v:
Journal of Applied Physics. 85:7671-7681
In the thermally grown silicon dioxide (SiO2) films, thermochemical-breakdown and hole-induced-breakdown models are theoretically formulated to explain the external electric-field dependence of time-dependent dielectric breakdown (TDDB) phenomenon. L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37f8d69fdec0f38dce7950c1263d396f
https://doi.org/10.1063/1.370570
https://doi.org/10.1063/1.370570
Autor:
Tadahiro Ohmi, Mikihiro Kimura
Publikováno v:
Journal of Applied Physics. 80(11):6360-6369
The conduction mechanism and origin of the electrical stress‐induced leakage current (SILC) in thin silicon dioxide (SiO2) films thermally grown on silicon substrate were clarified from various electrical properties. The properties examined consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83f3815b2b43e6f01033d39efb2dde45
http://hdl.handle.net/10097/48049
http://hdl.handle.net/10097/48049
Publikováno v:
Journal of Applied Physics. 77:1569-1575
Silicon‐surface microroughness was formed by cleaning cycles of an NH4OH‐H2O2‐H2O solution. Not only the roughness of the silicon surface, but also the roughness of the thermally oxidized surface and that of the surface after the removal of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6636fa277cde15870202105f603baa39
https://doi.org/10.1063/1.358909
https://doi.org/10.1063/1.358909
Autor:
Mikihiro Kimura
Publikováno v:
Journal of Applied Physics. 73:4388-4395
The generation phenomena and mechanisms of localized interface states at the Si/SiO2 interface, induced by irradiation and post‐irradiation annealing, are investigated by using 60Co γ rays. In a low dose irradiation of less than 1×106 rad, locali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20be825d797df72bc99286cfe2906ddb
https://doi.org/10.1063/1.352776
https://doi.org/10.1063/1.352776
Publikováno v:
Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::140f2dcd754919c0028a70e97ca05fc4
https://doi.org/10.7567/ssdm.1996.b-5-3
https://doi.org/10.7567/ssdm.1996.b-5-3
Autor:
Mikihiro Kimura, Tadahiro Ohmi
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::299d5f48d4c7f413c09e5ebf644aab54
https://doi.org/10.7567/ssdm.1995.s-i-7-2
https://doi.org/10.7567/ssdm.1995.s-i-7-2
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8a3cddd3c31bd21ebcdbb9ceba4b43
https://doi.org/10.7567/ssdm.1991.pb3-1
https://doi.org/10.7567/ssdm.1991.pb3-1
Autor:
Mikihiro Kimura, Tadahiro Ohmi
Publikováno v:
Japanese Journal of Applied Physics. 35:1478
A complete hole-induced breakdown model suggests that the intrinsic oxide breakdown under an optimal low-field operation lifetime is not a critical limitation in thin oxide films (30–180 Å). Also, buildup of the oxide trapped charges and generatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2569ec42cb7f6511b98187ae76186ec6
https://doi.org/10.1143/jjap.35.1478
https://doi.org/10.1143/jjap.35.1478
Publikováno v:
Japanese Journal of Applied Physics. 30:3634
The effect of low temperature hydrogen annealing (LTHA) in reducing the generation current at the local oxidation of silicon (LOCOS) isolation edge can be successfully investigated by C-t measurement of metal-oxide-semiconductor (MOS) capacitors with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51495d9dff898f370755f55636e47665
https://doi.org/10.1143/jjap.30.3634
https://doi.org/10.1143/jjap.30.3634
Autor:
Kimura, Mikihiro
Publikováno v:
Journal of Applied Physics; 5/1/1993, Vol. 73 Issue 9, p4388, 8p