Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Miki Tomotani"'
Publikováno v:
Acta Materialia. 48:4755-4762
PbZrTiO 3 (PZT) is one of the most promising ferroelectric materials for ferroelectric random access memory (FeRAM). But, there is a problem that the PZT ferroelectric properties are degraded with platinum (Pt) electrodes after annealing in a hydroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc6a45f0c6f5c988108c810fbe6d6bc
https://doi.org/10.1016/s1359-6454(00)00268-8
https://doi.org/10.1016/s1359-6454(00)00268-8
Publikováno v:
Key Engineering Materials. :69-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48b3e4b72d1698a913953a5bc1b346f9
https://doi.org/10.4028/www.scientific.net/kem.181-182.69
https://doi.org/10.4028/www.scientific.net/kem.181-182.69
Autor:
Mitsushi Fujiki, Yasuyuki Goto, Miki Tomotani, Katsuyoshi Matsuura, Yasutoshi Kotaka, Seigen Otani, Mineharu Tsukada, Jeffrey S. Cross, Yuji Kataoka
Publikováno v:
Integrated Ferroelectrics. 25:265-273
(Pb, La)(Zr, Ti)O3[PLZT] films were prepared by CSD on sputtered electrodes of Pt/IrO2 on SiO2/Si wafers. Top electrodes consisting of Pt/SrRuO3(SRO) were sputter deposited and the Pt/SRO/PLZT/Pt capacitors were annealed at 600°C. Evaluation of fati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d5f1aa334a7e3431cf1f131e0683ae
https://doi.org/10.1080/10584589908210177
https://doi.org/10.1080/10584589908210177
Comprehensive analytical expression for dose dependent ion-implanted impurity concentration profiles
Publikováno v:
Solid-State Electronics. 42:1671-1678
We propose an analytical expression for dose dependent ion-implanted impurity concentration profiles using a main function and a tail function. The main function describes the profile near the peak region and the tail function describes the channelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30a96210eb63d4872af5f33c4af6f4d6
https://doi.org/10.1016/s0038-1101(98)00145-2
https://doi.org/10.1016/s0038-1101(98)00145-2
Autor:
Tetsuro Tamura, Hiroshi Ashida, Yasuyuki Goto, Katsuyoshi Matsuura, Miki Tomotani, Seigen Otani
Publikováno v:
Integrated Ferroelectrics. 21:97-105
PZT is promising material for FeRAM. It has a serious problem on the CMOS wafer process that electrical properties are degraded with forming gas annealing. Recently, the degradation mechanism has been investigated actively, but it isn't understood en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4762752bbf97beb77b29a3a07b25a7f
https://doi.org/10.1080/10584589808202054
https://doi.org/10.1080/10584589808202054
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents the results of a study on the effects of N2-H2 annealing on Pt/PZT/Pt capacitors. By measuring the electrical properties of test capacitors before and after annealing and comparing the data with composition profiles obtained via s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b7ac24fdafdbcbfc556d2e094ba1f6
https://doi.org/10.31399/asm.cp.istfa1998p0185
https://doi.org/10.31399/asm.cp.istfa1998p0185
Publikováno v:
Japanese Journal of Applied Physics. 40:L346
The relationship between Sr interdiffusion from a Pt/SrRuO3 [SRO] top electrode into (Pb, La)(Zr, Ti)O3 [PLZT] ferroelectric thin films with different excess Pb contents (2–10%) and leakage properties was studied. Secondary ion mass spectrometry an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::017934a3b873c3c92c963dc4d6f8b5f4
https://doi.org/10.1143/jjap.40.l346
https://doi.org/10.1143/jjap.40.l346
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