Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Miki Moriyama"'
Autor:
Daisuke Nakamura, Kazuyoshi Iida, Kayo Horibuchi, Yuko Aoki, Naoko Takahashi, Yuto Mori, Miki Moriyama, Shugo Nitta, Hiroshi Amano
Publikováno v:
Applied Physics Express. 15:045501
The working mechanism of the anti-parasitic-reaction (APR) catalyst of tungsten carbide (WC) coating on graphite in hydride vapor phase epitaxy GaN growth were examined. During NH3 annealing, the surface of WC is reduced as well as nitrided. The W2N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6017b400d8d06205a4066dca90186f36
https://doi.org/10.35848/1882-0786/ac5ba4
https://doi.org/10.35848/1882-0786/ac5ba4
Publikováno v:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 24(1):190-194
The maximum electrical conductivities in polycrystalline Cu interconnects with sub-100nm linewidth were extrapolated from the measured resistivities of the Cu interconnects with various linewidths (100–1000nm) using a Mayadas–Shatzkes (MS) model.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d61eb296442c2ceb91a76827c29be194
http://hdl.handle.net/2433/34995
http://hdl.handle.net/2433/34995
Publikováno v:
Journal of Electronic Materials. 34:592-599
In order to study a formation mechanism of thin Ti-rich layers formed on the surfaces of Cu(Ti) wires after annealing at elevated temperatures, the 300-nm-thick Cu(Ti) alloy films with Ti concentration of 1.3 at.% or 2.9 at.% were prepared on the SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c0752057718843581279aa36697110b
https://doi.org/10.1007/s11664-005-0070-0
https://doi.org/10.1007/s11664-005-0070-0
Publikováno v:
MATERIALS TRANSACTIONS. 46:1036-1041
Grain growth rates in sputtered Cu thin films were found to be influenced by impurity levels of the sputtering targets. The Cu thin films with thickness of 100 nm or 1 μm were deposited on the rigid substrates by a sputter-deposition technique using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b9850868b54c9bc773490d25e7b5805
https://doi.org/10.2320/matertrans.46.1036
https://doi.org/10.2320/matertrans.46.1036
Publikováno v:
MATERIALS TRANSACTIONS. 46:1991-1995
In order to understand the formation mechanisms of indium contacts which were previously developed for CdTe radiation detectors with p–i–n structure, microstructure of the indium contacts which were deposited at various substrate temperatures on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bcbc49c6460d47bb778a595a60a7b89
https://doi.org/10.2320/matertrans.46.1991
https://doi.org/10.2320/matertrans.46.1991
Publikováno v:
Journal of The Surface Finishing Society of Japan. 56:802-806
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf3e68c18c4ab5756f63c4b78f27e9f
https://doi.org/10.4139/sfj.56.802
https://doi.org/10.4139/sfj.56.802
Publikováno v:
Materials Science Forum. :1705-1714
Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compoun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e66000458391a2258712358564186273
https://doi.org/10.4028/www.scientific.net/msf.475-479.1705
https://doi.org/10.4028/www.scientific.net/msf.475-479.1705
Publikováno v:
MATERIALS TRANSACTIONS. 46(7):1737-1740
Since Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical properties of Cu films have been extensively studied to prepare low resistance films. It was found in our previous papers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d80cb193f2abca6f0e9b8e47be3e208b
http://hdl.handle.net/2433/5982
http://hdl.handle.net/2433/5982
Publikováno v:
Thin Solid Films. 460:222-226
The main purpose of the present microstructural analysis by transmission electron microscopy (TEM) and X-ray diffraction was to investigate whether amorphous TaN films are a potential candidate as diffusion barrier for Cu wiring used in Si devices. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19d2d90d174ca5576fb4a26dea3f3b86
https://doi.org/10.1016/j.tsf.2004.01.073
https://doi.org/10.1016/j.tsf.2004.01.073
Publikováno v:
MATERIALS TRANSACTIONS. 45:3033-3038
The effect of intrinsic strain on grain growth in Cu thin films was studied by both plan-view and cross-sectional scanning ion microscope in a focused ion beam system. Significant grain growth with bimodal grain size distribution was observed during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31bb0d3a70bbfe98f93a461215f0a9ce
https://doi.org/10.2320/matertrans.45.3033
https://doi.org/10.2320/matertrans.45.3033