Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Mikhail Ya. Valakh"'
Autor:
V. V. Strelchuk, Andrii Nikolenko, O.V. Rozhylo, Yu. I. Prylutskyy, Peter Scharff, Uwe Ritter, Mikhail Ya. Valakh, M.M. Biliy, V. O. Gubanov
Publikováno v:
Materialwissenschaft und Werkstofftechnik. 42:33-36
Single-walled carbon nanotubes (SWCNT) synthesized by the arc-discharge method were investigated by Raman spectroscopy in detail. In particular, the sharp peaks in (200.–400) cm–1 spectral range of SWCNT, associated with low-frequency two-phonon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf968a4d68b60601be3b221cb9bbe7d6
https://doi.org/10.1002/mawe.201100726
https://doi.org/10.1002/mawe.201100726
Autor:
Nickolai I. Klyui, V.A. Semenovich, A. B. Romanyuk, Volodymyr Visotski, Mikhail Ya. Valakh, V. V. Artamonov, Alejandro Pérez-Rodríguez
Publikováno v:
Ceramics International. 26:29-32
Optical and mechanical properties of a-C:H films subjected to carbon or nitrogen ion implantation ( E =150 keV, D =1.10 13 −1.10 17 cm −2 ) were studied. A correlation between hardness and Raman spectrum parameters of the films has been ascertain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd17466bc231fc215c6dd8822a453c4f
https://doi.org/10.1016/s0272-8842(99)00015-2
https://doi.org/10.1016/s0272-8842(99)00015-2
Autor:
Peter M. Lytvyn, Mikhail Ya. Valakh, Djamila Hourlier, Andrii Voroschenko, Andrii Nikolenko, Yuriy Pedchenko, V. V. Strelchuk, A. I. Klimovskaya
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2011, 8, pp.1012-1016. ⟨10.1002/pssc.201000409⟩
physica status solidi (c), 2011, 8, pp.1012-1016. ⟨10.1002/pssc.201000409⟩
physica status solidi (c), Wiley, 2011, 8, pp.1012-1016. ⟨10.1002/pssc.201000409⟩
physica status solidi (c), 2011, 8, pp.1012-1016. ⟨10.1002/pssc.201000409⟩
Silicon nanowires were grown by gold enhanced CVD self-assembly technique. In the Raman spectra of nanowires, along with phonon band of cubic diamond phase (Si I) at near 521 cm-1, additional phonon bands at 516 and 496 cm-1 related to hexagonal wurt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a382475a024f5b466cf13fe1d4873e06
https://hal.archives-ouvertes.fr/hal-00579054
https://hal.archives-ouvertes.fr/hal-00579054
Autor:
William Ted Masselink, Zoryana Ya. Zhuchenko, C. Walther, S. R. Lavorik, H. Kissel, Yu. I. Mazur, U. Mueller, G. G. Tarasov, Mikhail Ya. Valakh
Publikováno v:
SPIE Proceedings.
Pseudomorphic strained-layer AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures have been studied by means of photoluminescence (PL) and Raman scattering. It is established the correlation between the PL line shape changes and the Raman spectra modification
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c535786e239674a9aeeea5bcd501f4
https://doi.org/10.1117/12.497184
https://doi.org/10.1117/12.497184
Autor:
Petr S. Kop'ev, T. V. Shubina, Mikhail Ya. Valakh, Sergei Ivanov, V. V. Strelchuk, M. V. Vuychik
Publikováno v:
SPIE Proceedings.
The intensive up-conversion photoluminescence (UPL) was observed at low temperatures in CdSe/ZnSe structures with single CdSe inserts of a nominal thickness of 1.5 and 0.6 ML. The quadratic-like dependence of UPL intensity on the excitation power was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7652c5567ae0b4f6483a0ce369a0ce0d
https://doi.org/10.1117/12.511505
https://doi.org/10.1117/12.511505
Autor:
Yu. N. Drozdov, V. A. Yukhymchuk, A. V. Novikov, Mikhail Ya. Valakh, A. N. Yablonsky, D. N. Lobanov, N. V. Vostokov, Z. F. Krasilnik
Publikováno v:
SPIE Proceedings.
The dependence of photoluminescence spectra of SiGe/Si(001) structures with self-assembled islands on Ge deposition temperature was investigated. Due to inhibition of SiGe alloying and an increase of the Ge content in islands the photoluminescence pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33da18c064d2c9c6af30d9c93460058
https://doi.org/10.1117/12.513596
https://doi.org/10.1117/12.513596
Autor:
O. V. Vasylyk, V.A. Semenovich, Juan Ramon Morante, Nickolai I. Klyui, B. N Romanyuk, Mikhail Ya. Valakh, Alejandro Pérez-Rodríguez, V. V. Artamonov
Publikováno v:
SPIE Proceedings.
Comparative study of nitrogen implanted a-C:H film has been carried out by micro-Raman and nanoindentation techniques. At high dose nitrogen implantation (1(DOT)10 17 cm -2 ) the structural inhomogeneities are observed in the implanted region. After
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af3ff41e12d1111531bb7a504e8f6ff1
https://doi.org/10.1117/12.306239
https://doi.org/10.1117/12.306239
Publikováno v:
SPIE Proceedings.
Hydrogenated amorphous diamond-like carbon (DLC) films produced by RF-glow discharge deposition from hydrocarbon mixtures in a parallel diode-type plasma reactor were investigated. The DLC films were obtained at various gas mixture compositions and b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1863d96f57556b98d01edadbde84926f
https://doi.org/10.1117/12.306245
https://doi.org/10.1117/12.306245
Publikováno v:
SPIE Proceedings.
MicroRaman, Raman, photoluminescence and x-ray diffraction spectra were measured for different SiC splices. It has been shown that Raman and especially MicroRaman scattering gives us a gain over other diagnostic techniques on the way to define polyty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04c6c490e65373b4547a198f3412b137
https://doi.org/10.1117/12.225295
https://doi.org/10.1117/12.225295
Publikováno v:
SPIE Proceedings.
Photoluminescence investigations of silicon subjected to such industrial treatments as implantation, high temperature postimplantation annealing, treatment in high frequency discharge plasma, as well as the prolonged thermal annealing with the format
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3ba2df28bdf028ca4007cb136f19e0e
https://doi.org/10.1117/12.191971
https://doi.org/10.1117/12.191971