Zobrazeno 1 - 2
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pro vyhledávání: '"Mikhail V. Pashkov"'
Autor:
Kirill D. Vanyukhin, Roman V. Zakharchenko, Nikolay I. Kargin, Mikhail V. Pashkov, Lev A. Seidman
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 2, Pp 54-59 (2016)
Ti/Al/Ni/Au metallization widely used in the technology of GaN base devices have a very important imperfection i.e. rough surface. There are different opinions about the causes of this imperfection: balling-up of molten aluminum or the appearance of
Externí odkaz:
https://doaj.org/article/25cdd05d7561409cbf7df09441766c6a
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 2, Pp 54-59 (2016)
Ti/Al/Ni/Au metallization widely used in the technology of GaN base devices have a very important imperfection i.e. rough surface. There are different opinions about the causes of this imperfection: balling-up of molten aluminum or the appearance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dcae902e4c25ad1b9eaacc264a519c08