Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Mikhail S. Storozhevykh"'
Autor:
Larisa V. Arapkina, Kirill V. Chizh, Vladimir P. Dubkov, Mikhail S. Storozhevykh, Vladimir A. Yuryev
Publikováno v:
SSRN Electronic Journal.
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the Ge wettin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82a3f175af1acc386270a9719fb838da
https://doi.org/10.2139/ssrn.4169676
https://doi.org/10.2139/ssrn.4169676
Autor:
Mikhail S. Storozhevykh, Larisa V. Arapkina, Sergey M. Novikov, Valentyn S. Volkov, Aleksey V. Arsenin, Oleg V. Uvarov, Vladimir A. Yuryev
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::576221f8edc8fb3f98f8d3fea7fc97c1
http://arxiv.org/abs/2104.05412
http://arxiv.org/abs/2104.05412
Autor:
Oleg V. Uvarov, Mikhail S. Storozhevykh, Vladimir A. Yuryev, Valentyn S. Volkov, Larisa V. Arapkina, Sergey M. Novikov
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It was found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f526bb8a226540e59194c8bb5af3f929
Autor:
Larisa V. Arapkina, S. S. Gizha, V. P. Kalinushkin, Mikhail S. Storozhevykh, V. A. Chapnin, V. M. Senkov, N. D. Beylin, Oleg V. Uvarov, I. V. Pirshin, K. V. Chizh, Vladimir A. Yuryev
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 9:734-737
The morphology of low-temperature (growth temperature 360 °C) multilayer Ge/Si heterostructures with Ge quantum dots was investigated by means of transmitting electron microscopy, scanning tunneling microscopy and X-ray optics. The possibility to de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0041b8c52f394dfd91f77bb57d6e50
https://doi.org/10.1166/jno.2014.1673
https://doi.org/10.1166/jno.2014.1673
Autor:
S. A. Mironov, K. V. Chizh, Larisa V. Arapkina, Mikhail S. Storozhevykh, V. P. Dubkov, V. A. Yuryev, V. A. Chapnin
Publikováno v:
SPIE Proceedings.
This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385ff8edaed5d2a8d98606d88483e9d2
https://doi.org/10.1117/12.2265882
https://doi.org/10.1117/12.2265882
Autor:
V. P. Kalinushkin, Larisa V. Arapkina, Mikhail S. Storozhevykh, Vladimir A. Yuryev, Oleg V. Uvarov
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 9:196-218
An overview of new results on growth and characterization of Ge/Si(001) heterostructures with dense chains of stacked Ge quantum dots is reported. Ge hut nucleation and growth at low temperatures is discussed on the basis of results obtained by high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c978e1cc64372589c70285325d0ad650
https://doi.org/10.1166/jno.2014.1587
https://doi.org/10.1166/jno.2014.1587
Autor:
Elena S. Zhukova, A. S. Prokhorov, Vladimir A. Yuryev, Martin Dressel, Silvia Haindl, V. A. Chapnin, Boris Gorshunov, Larisa V. Arapkina, Kazumasa Iida, V. P. Kalinushkin, Igor E. Spektor, A. A. Boris, Elizaveta Motovilova, Oleg V. Uvarov, Mikhail S. Storozhevykh, V. S. Nozdrin, L. S. Kadyrov, Sina Zapf, K. V. Chizh
Publikováno v:
Radiophysics and Quantum Electronics. 56:620-627
We demonstrate the efficiency of using interference effects in multilayer structures for a quantitative determination of submillimeter (submm) electrodynamic characteristics of materials using quasioptical spectroscopy based on backward-wave oscillat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8005fa2f0eaf76c2b2e183b00473cf8e
https://doi.org/10.1007/s11141-014-9466-0
https://doi.org/10.1007/s11141-014-9466-0
Publikováno v:
Nanoscale Research Letters
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and expl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::474650273b9dc75cc4ce6ad030f4937e
http://europepmc.org/articles/PMC4503702
http://europepmc.org/articles/PMC4503702
The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at 600C in cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::993818ee5dc475e83f490f563a591588
Autor:
Mikhail S. Storozhevykh, V. P. Kalinushkin, Oleg V. Uvarov, Larisa V. Arapkina, Vladimir A. Yuryev
Publikováno v:
SPIE Proceedings.
Growth and characterization of Ge/Si(001) heterostructures with dense chains of stacked Ge quantum dots are reported. Ge hut nucleation and growth at low temperatures is discussed on the basis of results obtained by high resolution scanning tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::165db09e2c5f5bb69555ea1c9a47f997
https://doi.org/10.1117/12.2017072
https://doi.org/10.1117/12.2017072