Zobrazeno 1 - 10
of 286
pro vyhledávání: '"Mikhail R. Baklanov"'
Autor:
Mikhail R. Baklanov, Andrei A. Gismatulin, Sergej Naumov, Timofey V. Perevalov, Vladimir A. Gritsenko, Alexey S. Vishnevskiy, Tatyana V. Rakhimova, Konstantin A. Vorotilov
Publikováno v:
Polymers, Vol 16, Iss 15, p 2230 (2024)
Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composi
Externí odkaz:
https://doaj.org/article/e2f7c39f9c1f42738459a47bef731a5b
Autor:
Md Rasadujjaman, Jinming Zhang, Dmitry A. Spassky, Sergej Naumov, Alexey S. Vishnevskiy, Konstantin A. Vorotilov, Jiang Yan, Jing Zhang, Mikhail R. Baklanov
Publikováno v:
Nanomaterials, Vol 13, Iss 8, p 1419 (2023)
UV-induced photoluminescence of organosilica films with ethylene and benzene bridging groups in their matrix and terminal methyl groups on the pore wall surface was studied to reveal optically active defects and understand their origin and nature. Th
Externí odkaz:
https://doaj.org/article/156a87d9eeee46ab8917e7695b42dda2
Autor:
Md Rasadujjaman, Jinming Zhang, Konstantin P. Mogilnikov, Alexey S. Vishnevskiy, Jing Zhang, Mikhail R. Baklanov
Publikováno v:
Data in Brief, Vol 35, Iss , Pp 106895- (2021)
A dataset in this report is regarding an article, “A detailed ellipsometric porosimetry and positron annihilation spectroscopy study of porous organosilicate glass films with various ratios of methyl terminal and ethylene bridging groups” [1]. Th
Externí odkaz:
https://doaj.org/article/7401e85e962049d29296782706f39f96
Autor:
Sathyan Sandeep, Alexey S. Vishnevskiy, Samuel Raetz, Sergej Naumov, Dmitry S. Seregin, Artem Husiev, Konstantin A. Vorotilov, Vitalyi E. Gusev, Mikhail R. Baklanov
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1600 (2022)
We applied time-domain Brillouin scattering (TDBS) for the characterization of porogen-based organosilicate glass (OGS) films deposited by spin-on-glass technology and cured under different conditions. Although the chemical composition and porosity m
Externí odkaz:
https://doaj.org/article/d6cd34d7ec9547b8901cc623e8f1e5cf
Autor:
Svetlana V. Postolova, Alexey Yu. Mironov, Mikhail R. Baklanov, Valerii M. Vinokur, Tatyana I. Baturina
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract A reentrant temperature dependence of the normal state resistance often referred to as the N-shaped temperature dependence, is omnipresent in disordered superconductors – ranging from high-temperature cuprates to ultrathin superconducting
Externí odkaz:
https://doaj.org/article/cdf4e565aaf84792bb34cb468d954c34
Autor:
Md Rasadujjaman, Xuesong Wang, Yanrong Wang, Jing Zhang, Valeriy E. Arkhincheev, Mikhail R. Baklanov
Publikováno v:
Materials, Vol 14, Iss 8, p 1881 (2021)
Organosilicate glass (OSG)-based porous low dielectric constant (low-k) films with different molar ratios of 1,3,5-tris(triethoxysilyl)benzene to 1,3-bis(triethoxysilyl)benzene bridging organic groups (1:3 and 1:7) were spin-on deposited, followed by
Externí odkaz:
https://doaj.org/article/f98a68ca0fcb41ac8c1d1db8f814b4b4
Autor:
Alexey S. Vishnevskiy, Sergej Naumov, Dmitry S. Seregin, Yu-Hsuan Wu, Wei-Tsung Chuang, Md Rasadujjaman, Jing Zhang, Jihperng Leu, Konstantin A. Vorotilov, Mikhail R. Baklanov
Publikováno v:
Materials, Vol 13, Iss 20, p 4484 (2020)
Organosilicate glass-based porous low dielectic constant films with different ratios of terminal methyl to bridging organic (methylene, ethylene and 1,4-phenylene) groups are spin-on deposited by using a mixture of alkylenesiloxane with organic bridg
Externí odkaz:
https://doaj.org/article/0d6efd0b63744091820e5063d6dedd87
Autor:
Svetlana V. Postolova, Alexey Yu. Mironov, Víctor Barrena, Jose Benito-Llorens, Jose Gabriel Rodrigo, Hermann Suderow, Mikhail R. Baklanov, Tatyana I. Baturina, Valerii M. Vinokur
Publikováno v:
Physical Review Research, Vol 2, Iss 3, p 033307 (2020)
We study electronic densities of states (DOS) of strongly disordered superconducting thin films of TiN. We find through scanning tunneling microscopy (STM) measurements that the DOS decreases towards the Fermi level in the normal phase obtained by ap
Externí odkaz:
https://doaj.org/article/f7af35ee7cab48e585615ef21692f1b1
Autor:
Christophe Detavernier, Pascal Van Der Voort, Isabel Van Driessche, Mikhail R. Baklanov, Els De Canck, Elisabeth Levrau, Frederik Goethals
Publikováno v:
Materials, Vol 6, Iss 2, Pp 570-579 (2013)
To use mesoporous silicas as low-k materials, the pore entrances must be really small to avoid diffusion of metals that can increase the dielectric constant of the low-k dielectric. In this paper we present a new method to narrow the pores of mesopor
Externí odkaz:
https://doaj.org/article/7988afc98ae2496fa6ba7bcb85ef949a
Autor:
Alexey I. Zotovich, Sergey M. Zyryanov, Dmitry V. Lopaev, Askar A. Rezvanov, Ahmed G. Attallah, Maciej O. Liedke, Maik Butterling, Maria A. Bogdanova, Alexey S. Vishnevskiy, Dmitry S. Seregin, Dmitry A. Vorotyntsev, Alexander P. Palov, Eric Hirschmann, Andreas Wagner, Sergej Naumov, Konstantin A. Vorotilov, Tatyana V. Rakhimova, Alexander T. Rakhimov, Mikhail R. Baklanov
Publikováno v:
ACS Applied Electronic Materials. 4:2760-2776
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b4961675ce7bc5a02a18b6d5d562530
https://doi.org/10.1021/acsaelm.2c00281
https://doi.org/10.1021/acsaelm.2c00281