Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Mikhail P. Shcheglov"'
Autor:
Aleksei V. Almaev, Nikita N. Yakovlev, Bogdan O. Kushnarev, Viktor V. Kopyev, Vadim A. Novikov, Mikhail M. Zinoviev, Nikolay N. Yudin, Sergey N. Podzivalov, Nadezhda N. Erzakova, Andrei V. Chikiryaka, Mikhail P. Shcheglov, Houssain Baalbaki, Alexey S. Olshukov
Publikováno v:
Coatings. 2022. Vol. 12, № 10. P. 1565 (1-17)
Coatings; Volume 12; Issue 10; Pages: 1565
Coatings; Volume 12; Issue 10; Pages: 1565
TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4 and O2 on the electrically conductive properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8535f0eaebc7f957c824f129d86733c
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997770
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000997770
Autor:
Alexander A. Koryakin, Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh. Sharofidinov, Mikhail P. Shcheglov
Publikováno v:
Materials; Volume 15; Issue 18; Pages: 6202
In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd963ea5026b06f39228f483e9855bd4
https://doi.org/10.3390/ma15186202
https://doi.org/10.3390/ma15186202
Autor:
Demid A. Kirilenko, Sergey P. Lebedev, Denis B. Shustov, Maria V. Zamoryanskaya, Mikhail P. Shcheglov, Sergey Davydov, Alexander A. Lebedev, Lev M. Sorokin
Publikováno v:
Materials Science Forum. :247-250
Transmission electron microscopy and the cathodoluminescence method have been used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers, with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8358d8f4dc3b4758fca20d409f9162ce
https://doi.org/10.4028/www.scientific.net/msf.778-780.247
https://doi.org/10.4028/www.scientific.net/msf.778-780.247