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pro vyhledávání: '"Mikhail P. Scheglov"'
Autor:
Eugene B. Yakimov, Alexander Y. Polyakov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Mikhail P. Scheglov, Eugene E. Yakimov, Stephen J. Pearton
Publikováno v:
Nanomaterials, Vol 13, Iss 7, p 1214 (2023)
In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-dimensiona
Externí odkaz:
https://doaj.org/article/2df1d68f47d8404f8f750310d3147686
