Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Mikhail Maximov"'
Autor:
Fedor Zubov, Eduard Moiseev, Mikhail Maximov, Alexander Vorobyev, Alexey Mozharov, Yuri Shernyakov, Nikolay Kalyuzhnyy, Sergey Mintairov, Marina Kulagina, Vladimir Dubrovskii, Natalia Kryzhanovskaya, Alexey Zhukov
Publikováno v:
Photonics, Vol 10, Iss 3, p 290 (2023)
We report on half-ring lasers that are 100–200 µm in diameter and are fabricated by cleaving the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the same wafer are compared. The active area of
Externí odkaz:
https://doaj.org/article/5906a8b3e1694b1a9fbc3152a620b7ee
Autor:
Ivan Makhov, Konstantin Ivanov, Eduard Moiseev, Anna Dragunova, Nikita Fominykh, Yuri Shernyakov, Mikhail Maximov, Natalia Kryzhanovskaya, Alexey Zhukov
Publikováno v:
Photonics, Vol 10, Iss 3, p 235 (2023)
The two-state lasing phenomenon, which manifests itself in simultaneous laser emission through several optical transitions of quantum dots, is studied in microdisk diode lasers with different cavity diameters. The active region represents a multiply
Externí odkaz:
https://doaj.org/article/79646ff9d9524b1f85c8af83dd8f5dbc
Autor:
Natalia V. Kryzhanovskaya, Eduard Moiseev, Fedor Zubov, Mikhail Maximov, Sergey Blokhin, Nikolay Kalyuzhnyy, Sergey Mintairov, Marina Kulagina, Nikolay Ledentsov, Alexey Zhukov
Publikováno v:
Semiconductor Lasers and Laser Dynamics IX.
We show that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth. A maximum 3-dB modulation frequency of about 6 GHz was found. The K-limited maximal frequency of 13 GHz was estimated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409c41c99489fdcb1391f1d7b1e854f9
https://doi.org/10.1117/12.2554552
https://doi.org/10.1117/12.2554552
Publikováno v:
Journal of the Optical Society of America B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::83d37a592b2007f0dd3d4266ae674f5b
Autor:
Fedor Zubov, Mikhail Maximov, Natalia Kryzhanovskaya, Eduard Moiseev, Maria Muretova, Alexey Mozharov, Nikolay Kaluzhnyy, Sergey Mintairov, Marina Kulagina, Nikolay Ledentsov, Lukasz Chorchos, Alexey Zhukov
Publikováno v:
Optics Letters. 44:5442
We report on direct large signal modulation and the reliability studies of microdisk lasers based on InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10a7e905e84374d948cb3f3ff8892b1b
https://doi.org/10.1364/ol.44.005442
https://doi.org/10.1364/ol.44.005442
Autor:
Artem Savelyev, Mikhail Maximov, Charis Mesaritakis, Alexey Nadtochiy, Natalia Kryzhanovskaya
Publikováno v:
Optoelectronic Devices and Integration IV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec3ac2e051ca10bad1244eb11b8f84e4
https://doi.org/10.1117/12.2014551
https://doi.org/10.1117/12.2014551
Autor:
Mikhail Maximov, Nikolai Ledentsov
Publikováno v:
Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition-Six Volume Set (Print Version) ISBN: 9780824750558
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::278793868bae2dcb9739b316446a8b03
https://doi.org/10.1201/9781439834398.ch247
https://doi.org/10.1201/9781439834398.ch247
Autor:
Krestnikov, I. L., Ledentsov, N. N., Mikhail Maximov, Bimberg, D., Bedarev, D. A., Kochnev, I. V., Lantratov, V. M., Cherkashin, N. A., Musikhin, Yu G., Alferov, Zh I.
Publikováno v:
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358
Scopus-Elsevier
Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358
Scopus-Elsevier
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2acf63619f82339d15e8c0f0e4427d38
https://hal.archives-ouvertes.fr/hal-01736132
https://hal.archives-ouvertes.fr/hal-01736132
Autor:
Bimberg, D., Ledentsov, N. N., Grundmann, M., Heinrichsdorff, F., Ustinov, V. M., Kop Ev, P. S., Mikhail Maximov, Alferov, Zh I., Lott, J. A.
Publikováno v:
Scopus-Elsevier
Significant improvements in characteristics of injection lasers were proposed for quantum dots (QDs) as gain medium [1]. However, there was a lack of fruitful ideas to fabricate QDs which can be used for realistic devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4b7cf7de7771fe3680225d940db7e44
https://doi.org/10.1364/cleo_europe.1998.ctug1
https://doi.org/10.1364/cleo_europe.1998.ctug1
Publikováno v:
Semiconductors. 39:1415
Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcdf57c83a4c328b0a44fb6b92ee192e
https://doi.org/10.1134/1.2140316
https://doi.org/10.1134/1.2140316