Zobrazeno 1 - 10
of 340
pro vyhledávání: '"Mikhail R. Baklanov"'
Autor:
Md Rasadujjaman, Jinming Zhang, Dmitry A. Spassky, Sergej Naumov, Alexey S. Vishnevskiy, Konstantin A. Vorotilov, Jiang Yan, Jing Zhang, Mikhail R. Baklanov
Publikováno v:
Nanomaterials, Vol 13, Iss 8, p 1419 (2023)
UV-induced photoluminescence of organosilica films with ethylene and benzene bridging groups in their matrix and terminal methyl groups on the pore wall surface was studied to reveal optically active defects and understand their origin and nature. Th
Externí odkaz:
https://doaj.org/article/156a87d9eeee46ab8917e7695b42dda2
Autor:
Md Rasadujjaman, Jinming Zhang, Konstantin P. Mogilnikov, Alexey S. Vishnevskiy, Jing Zhang, Mikhail R. Baklanov
Publikováno v:
Data in Brief, Vol 35, Iss , Pp 106895- (2021)
A dataset in this report is regarding an article, “A detailed ellipsometric porosimetry and positron annihilation spectroscopy study of porous organosilicate glass films with various ratios of methyl terminal and ethylene bridging groups” [1]. Th
Externí odkaz:
https://doaj.org/article/7401e85e962049d29296782706f39f96
Autor:
Sathyan Sandeep, Alexey S. Vishnevskiy, Samuel Raetz, Sergej Naumov, Dmitry S. Seregin, Artem Husiev, Konstantin A. Vorotilov, Vitalyi E. Gusev, Mikhail R. Baklanov
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1600 (2022)
We applied time-domain Brillouin scattering (TDBS) for the characterization of porogen-based organosilicate glass (OGS) films deposited by spin-on-glass technology and cured under different conditions. Although the chemical composition and porosity m
Externí odkaz:
https://doaj.org/article/d6cd34d7ec9547b8901cc623e8f1e5cf
Autor:
Svetlana V. Postolova, Alexey Yu. Mironov, Mikhail R. Baklanov, Valerii M. Vinokur, Tatyana I. Baturina
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract A reentrant temperature dependence of the normal state resistance often referred to as the N-shaped temperature dependence, is omnipresent in disordered superconductors – ranging from high-temperature cuprates to ultrathin superconducting
Externí odkaz:
https://doaj.org/article/cdf4e565aaf84792bb34cb468d954c34
Autor:
Alexey I. Zotovich, Sergey M. Zyryanov, Dmitry V. Lopaev, Askar A. Rezvanov, Ahmed G. Attallah, Maciej O. Liedke, Maik Butterling, Maria A. Bogdanova, Alexey S. Vishnevskiy, Dmitry S. Seregin, Dmitry A. Vorotyntsev, Alexander P. Palov, Eric Hirschmann, Andreas Wagner, Sergej Naumov, Konstantin A. Vorotilov, Tatyana V. Rakhimova, Alexander T. Rakhimov, Mikhail R. Baklanov
Publikováno v:
ACS Applied Electronic Materials. 4:2760-2776
Autor:
Md Rasadujjaman, Jinming Zhang, Dmitry A. Spassky, Sergej Naumov, Alexey S. Vishnevskiy, Konstantin A. Vorotilov, Jiang Yan, Jing Zhang, Mikhail R. Baklanov
UV induced photoluminescence of organosilica films with ethylene and benzene bridging groups in their matrix and terminal methyl groups on the pore wall surface is studied to reveal optically active defects and understand their origin and nature. Car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cb81a962840c8ace16354cd93cd589b
https://doi.org/10.20944/preprints202303.0348.v1
https://doi.org/10.20944/preprints202303.0348.v1
Autor:
Svetlana V. Postolova, Alexey Yu. Mironov, Víctor Barrena, Jose Benito-Llorens, Jose Gabriel Rodrigo, Hermann Suderow, Mikhail R. Baklanov, Tatyana I. Baturina, Valerii M. Vinokur
Publikováno v:
Physical Review Research, Vol 2, Iss 3, p 033307 (2020)
We study electronic densities of states (DOS) of strongly disordered superconducting thin films of TiN. We find through scanning tunneling microscopy (STM) measurements that the DOS decreases towards the Fermi level in the normal phase obtained by ap
Externí odkaz:
https://doaj.org/article/f7af35ee7cab48e585615ef21692f1b1
Autor:
Alexander O. Serov, Alexey N. Ryabinkin, Alexey S. Vishnevskiy, Sergej Naumov, Alexander F. Pal, Tatyana V. Rakhimova, Dmitry S. Seregin, Konstantin A. Vorotilov, Mikhail R. Baklanov
Publikováno v:
Plasma Processes and Polymers. 20
Autor:
Askar A. Rezvanov, Andrey V. Miakonkikh, Alexey S. Vishnevskiy, Dmitriy S. Seregin, Konstantin A. Vorotilov, Konstantin A. Rudenko, Mikhail R. Baklanov
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Publikováno v:
Coatings, Vol 11, Iss 937, p 937 (2021)
Coatings
Volume 11
Issue 8
Coatings
Volume 11
Issue 8
By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure,