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Autor:
Xueping Xu, Edward A. Preble, Mike Tutor, Mark N. Williams, Denis Tsvetkov, Drew Hanser, Lianghong Liu
Publikováno v:
Journal of Crystal Growth. 305:372-376
Large gallium nitride (GaN) crystals were grown using a hydride vapor phase epitaxy (HVPE) technique and were processed into substrates for device applications. Polishing procedures were developed for GaN substrates to produce surfaces prepared for e