Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Mike Seacrist"'
Autor:
Jeffrey L. Libbert, Jensen Leif, Mike Seacrist, Theis Leth Sveigaard, Shawn G. Thomas, Carissma Hudson
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Results are given of an evaluation of Nitrogen doped Float Zone (FZ) silicon wafers as an ultra-high resistivity base wafer for creating a Charge Trap Layer SOI (CTL-SOI) wafer. The FZmaterial was found to perform equivalently to Czochralski (CZ) waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5dcd3c81cc77caa9c68fcec63f35226
https://doi.org/10.1109/s3s46989.2019.9320696
https://doi.org/10.1109/s3s46989.2019.9320696
Autor:
Aditya Janardan Deshpande, J. Chen, Jeff Binns, Gang Shi, Mike Seacrist, Srinivas Devayajanam, Bhushan Sopori, Jesse Appel, Vishal Mehta
Publikováno v:
Solid State Phenomena. :55-64
This paper describes results of our study aimed at understanding mechanism (s) of dislocation generation and propagation in multi-crystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84bcceba64b8387efd0904fef8ca7229
https://doi.org/10.4028/www.scientific.net/ssp.205-206.55
https://doi.org/10.4028/www.scientific.net/ssp.205-206.55
Publikováno v:
Solid State Phenomena. :201-208
Vibrational spectroscopy has been used to investigate the properties of hydrogen in multicrystalline Si (mc-Si) and its interactions with carbon impurities that can be present with high concentration. The properties of point defects containing N and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f0b126510fb2b6e9e5cdc145b08f7c
https://doi.org/10.4028/www.scientific.net/ssp.205-206.201
https://doi.org/10.4028/www.scientific.net/ssp.205-206.201
Publikováno v:
Journal of Materials Research. 27:349-355
Nanoindentation was used to examine the impact of impurities and grain boundaries on the mechanical properties of a “model” (110)/(100) grain boundary (GB) interface prepared using direct silicon bonding via the hybrid orientation technique of (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b639938425e5f9dd4166df1730184178
https://doi.org/10.1557/jmr.2011.265
https://doi.org/10.1557/jmr.2011.265
Autor:
M. G. Mil’vidskii, M. Ries, Robert J. Falster, Mike Seacrist, Nikolai Zakharov, Peter Werner, V. I. Vdovin, Eckhard Pippel
Publikováno v:
Solid State Phenomena. :85-90
Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3749eb6b6371fcca97839bb59305ada5
https://doi.org/10.4028/www.scientific.net/ssp.156-158.85
https://doi.org/10.4028/www.scientific.net/ssp.156-158.85
Autor:
Eckhard Pippel, Mike Seacrist, Nikolai Zakharov, Robert J. Falster, Peter Werner, V. I. Vdovin, Mikhail Milvidskii, M. Ries
Publikováno v:
physica status solidi c. 6:1929-1934
Dislocation structure in Si(110)/Si(001) wafer bonding (WB) structures have been studied by transmission electron microscopy (TEM). The behavior of intermediate native oxide layers during high temperature annealing, the nature of interfacial dislocat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e00f30a23892a9d7dbf08a0f9e94f832
https://doi.org/10.1002/pssc.200881431
https://doi.org/10.1002/pssc.200881431
Autor:
Aziz Shaikh, Vishal Mehta, D.E. Carlson, H. Mountinho, Bhushan Sopori, P. Rupnowski, Vinay Budhraja, Mike Seacrist, Mowafak Al-Jassim, Steve Johnston, N. Call
Publikováno v:
ECS Transactions. 18:1049-1058
Multicrystalline silicon wafers used for solar cells exhibit defect clusters-localized crystal defects in and near grains of some specific orientations. Defect clusters are also dominant sites for impurity precipitation, and they remain ungettered an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::362fb09ff46c72c676647aa3cef6befc
https://doi.org/10.1149/1.3096571
https://doi.org/10.1149/1.3096571
Publikováno v:
ECS Transactions. 16:293-298
In this paper, defects and strain in SiGe heterostructures with 8, 13, 25, or 40 nm strained-Si (sSi) on top of 300 or 600 nm Si0.77Ge0.23 buffer have been examined. We found that threading dislocations (TDs) in the super-critical thickness sSi sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa55acf6cdc84a414ee003fc254fd11
https://doi.org/10.1149/1.2986786
https://doi.org/10.1149/1.2986786
Publikováno v:
Physica B: Condensed Matter. :564-567
This paper reports on the effect hydrogenation has on the electrical properties of hybrid-orientation (1 1 0)/(1 0 0) direct silicon bonded interfaces. Temperature-dependent capacitance measurements and deep-level transient spectroscopy were used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eee44ac84e47bba5110afe5d17430e2
https://doi.org/10.1016/j.physb.2007.09.022
https://doi.org/10.1016/j.physb.2007.09.022
Publikováno v:
Solid State Phenomena. :321-326
This paper describes a series of electrical measurements and sample modifications that enabled the electrical properties of hybrid-orientation direct silicon bonded wafer interfaces to be determined. It is shown that the carrier transport across this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::768ed13666b0a747542a15f69c5179b8
https://doi.org/10.4028/www.scientific.net/ssp.131-133.321
https://doi.org/10.4028/www.scientific.net/ssp.131-133.321