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pro vyhledávání: '"Mike Littau"'
Publikováno v:
SPIE Proceedings.
Scatterometry is a novel metrology approach for process control that has recently been gaining more momentum in microlithography applications. The method can simultaneously measure Critical Dimension (CD), Side Wall Angle (SWA), and thickness of more
Publikováno v:
SPIE Proceedings.
In this work we demonstrate the application of a unique type of scatterometer to the measurement of advanced geometry semiconductor devices. Known as a dome scatterometer, the technology is capable of measuring multiple diffraction orders at multiple
Publikováno v:
SPIE Proceedings.
For typical single and double-periodic structures that scatterometry is employed to measure, grating pitch has traditionally been treated as an invariant and well-known parameter. Mask writing processes and lithographic exposure tools are generally r
Publikováno v:
SPIE Proceedings.
Scatterometry is a fast, non-destructive critical dimension (CD) optical metrology technique based on the analysis of light scattered from a periodic array of features. With technological advances in manufacturing, semiconductor devices are made in e
Autor:
Elizabeth Donohue, Jasen Moffitt, Prasad Dasari, Igor Jekauc, Christopher J. Raymond, Mike Littau, Sushil Shakya
Publikováno v:
SPIE Proceedings.
The deployment of angular scatterometry as a powerful and effective process control methodology has recently included the measurement of etched metal features in a typical complex Aluminum stack. With the control of metal process steps taking a more
Autor:
Peter Reinig, Thomas Hingst, Sushil Shakya, Manfred Moert, Mike Littau, Rene Dost, Jasen Moffitt, Christopher J. Raymond, Ulrich Mantz
Publikováno v:
SPIE Proceedings.
Scatterometry is receiving considerable attention as an emerging optical metrology in the silicon industry. One area of progress in deploying these powerful measurements in process control is performing measurements on real device structures, as oppo
Publikováno v:
SPIE Proceedings.
Lithography process control remains a significant challenge in modern semiconductor manufacturing. Metrology efforts must overcome the complexity of the lithography process, as well as the number of process elements that contribute to overall process