Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Mike Lioubtchenko"'
Autor:
Robert F. Davis, Mike Lioubtchenko, David Bray, Nalin R. Parikh, John D. Hunn, Eric Carlson, Agajan Suvkhanov, Michael D. Bremser
Publikováno v:
Scopus-Elsevier
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studied for radiation damage and its recovery using Rutherford backscattering/channeling, photoluminescence, and cross-sectional TEM. The highest fluence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12b9e5c65be318ab604b5c0d8c17b645
https://doi.org/10.1016/s0168-583x(97)00076-1
https://doi.org/10.1016/s0168-583x(97)00076-1
Autor:
Mike Lioubtchenko, Matthew Schurmant, Qisheng Chen, H. Paul Maruska, Thomas G. Tetreault, Shiro Sakap, Robert Vaudo, Marek Osinskif, Randy J. Shult, Stephen J. Pearton
Publikováno v:
Scopus-Elsevier
With great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::940997c2ba96334c5baaeec3c6a4433f
https://doi.org/10.1557/proc-483-333
https://doi.org/10.1557/proc-483-333
Conference
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