Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Mike J. Shaw"'
Autor:
Abe D. Handler, Tayyab I. Suratwala, S. Sommer, Ken Manes, Mike J. Shaw, Catalin V. Filip, J. Nan Wong, Jason Chou, Apurva Gowda, Pam Whitman, S. Herriot, Thomas E. Lanier, B. Olejniczak, Paul J. Wegner, Tiziana C. Bond, Mary L. Spaeth, Steven T. Yang, C. Clay Widmayer, V.J. Hernandez, Alex Wargo, Charles D. Orth, Lei Wang, Alex Deland, Ron House, Mario Ordonez, Brett Raymond, Brandon Buckley, Alica Calonico Soto, Michael A. Erickson, Leyen S. Chang, B. J. MacGowan, Dan Kalantar, Peter T. S. DeVore, Larry Pelz, Simon J. Cohen, Kathleen McCandless, Bruno M. Van Wonterghem, Mark W. Bowers, Nathan Gottesman, Jim A. Folta, Ryan Muir, David Alessi, D. Larson, Ernesto H. Padilla, Saroja Ammula, Shahida I. Rana, Alan Pao, Chris Kinsella, Jean-Michel G. Di Nicola, John E. Heebner, G. Erbert, W. Carr
Publikováno v:
High Power Lasers for Fusion Research VI.
The National Ignition Facility (NIF) at Lawrence Livermore National Laboratory contains a 192-beam 4.2 MJ neodymium glass laser (around 1053 nm or 1w) that is frequency converted to 351nm light or 3w. It has been designed to support the study of Iner
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7429503f6dcf72c53f9bc57f92e9d4bd
https://doi.org/10.1117/12.2586868
https://doi.org/10.1117/12.2586868
Autor:
Remy Claveau, Delmiro Fernandez-Reyes, Petru Manescu, Vijay Pawar, Biobele J. Brown, Mike J. Shaw, Muna Elmi, Christopher Bendkowski
Publikováno v:
Medical Image Computing and Computer Assisted Intervention – MICCAI 2020 ISBN: 9783030597214
MICCAI (5)
MICCAI (5)
Machine vision analysis of blood films imaged under a brightfield microscope could provide scalable malaria diagnosis solutions in resource constrained endemic urban settings. The major bottleneck in successfully analyzing blood films with deep learn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9356344269373ee63077e95f32e9ad5
https://doi.org/10.1007/978-3-030-59722-1_22
https://doi.org/10.1007/978-3-030-59722-1_22
Publikováno v:
Microelectronics Journal. 32:593-598
A series of GaInSb/InAs heterostructures for infra-red detector devices are studied using a strain-dependent empirical pseudopotential scheme. The effect of a number of structural design parameters upon key properties of the structures for detector a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8723e7e4897d1d3acd91fac85fc24482
https://doi.org/10.1016/s0026-2692(01)00029-5
https://doi.org/10.1016/s0026-2692(01)00029-5
Publikováno v:
Applied Surface Science. 166:35-39
We report an empirical pseudopotential study of the optical properties of several InAs/GaSb superlattice structures, some of these additionally containing Ga 1− x In x Sb and AlSb layers, designed for infrared (IR) applications. The optical absorpt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14bfbf5a5b9fe7aff0f5d41e01af4826
https://doi.org/10.1016/s0169-4332(00)00424-4
https://doi.org/10.1016/s0169-4332(00)00424-4
Publikováno v:
Physical Review B. 53:6988-6991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9598c77ae195e48dbb276f391bc9522
https://doi.org/10.1103/physrevb.53.6988
https://doi.org/10.1103/physrevb.53.6988
Publikováno v:
SPIE Proceedings.
We present a microscopic model of emission in a series of strain-compensated GaInAs/GaAsSb type-II superlattice structures with infrared applications. The need for an improved understanding of the optoelectronic characteristics of these systems, both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d0d8779fc4b74ce05c296f3294133f7
https://doi.org/10.1117/12.432561
https://doi.org/10.1117/12.432561
Autor:
John P. Sullivan, Jianyu Y. Huang, Mike J. Shaw, Kevin R. Zavadil, Arunkuman Subramanian, Yang Liu, Xiao Hua Liu, Nick Hudak, Sean J. Hearne
Publikováno v:
ECS Meeting Abstracts. :503-503
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a77685083137ea832f75df076ef762ff
https://doi.org/10.1149/ma2012-01/9/503
https://doi.org/10.1149/ma2012-01/9/503
Publikováno v:
SPIE Proceedings.
Both, GaAs-AlAs and Si-SiGe quantum well structures have been considered for applications as infrared detectors, modulators and switching devices. The miniband structure in these systems covers a wide range of energies (e.g. 1 - 400 meV) and offers a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9299c834f73d7e2126648ab5d84946d
https://doi.org/10.1117/12.185110
https://doi.org/10.1117/12.185110
Autor:
Zhiwei Xu, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella, H. Alan Schwettman
Publikováno v:
Quantum Well and Superlattice Physics V.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80006932cf513e14e8813b73f3e6bd58
https://doi.org/10.1117/12.175709
https://doi.org/10.1117/12.175709
Publikováno v:
Quantum Well Intersubband Transition Physics and Devices ISBN: 9789401045018
We present full scale relativistic pseudopotential calculations of both the first and second order susceptibility in p-type GaAs-AlAs and Si-SiGe structures. The frequency dependence of the linear and non-linear response due to transitions between va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f3d6f6d14aa2aa7dc92803a5e53f4cf
https://doi.org/10.1007/978-94-011-1144-7_41
https://doi.org/10.1007/978-94-011-1144-7_41