Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Mike F. Chang"'
Publikováno v:
IEEE Transactions on Industry Applications. 26:831-834
Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d01271ccc57a769c9d55589c2888b3
https://doi.org/10.1109/28.60048
https://doi.org/10.1109/28.60048
Publikováno v:
[Proceedings] APEC '91: Sixth Annual Applied Power Electronics Conference and Exhibition.
Device modeling, device design optimization for specific applications, and future trends in power MOSFET technology are examined. A DMOS FET technology with 2.5 million cells/inch/sup 2/ and submicron channel length that minimizes on-resistance is in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0092500102ff4909dc057ff2343a4dc0
https://doi.org/10.1109/apec.1991.146225
https://doi.org/10.1109/apec.1991.146225
Autor:
W. Grabowski, Mohamed N. Darwish, Hamza Yilmaz, Mike F. Chang, K. Owyang, Richard K. Williams
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
A new concept to control TrenchFET avalanche breakdown using an evenly distributed array of voltage clamps in a 1-of-n cell arrangement is introduced, improving on-resistance without sacrificing device ruggedness. Using this technique, a 32 Mcell/in/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2207514002a329394f7fcafd92318d37
https://doi.org/10.1109/iedm.1997.650400
https://doi.org/10.1109/iedm.1997.650400
Autor:
Mike F. Chang
Publikováno v:
Journal of The Electrochemical Society. 128:1963-1967
By using the TGZM technique, a job that traditionally needs hundreds of hours of diffusion can be done in minutes. However, various instabilities may be encountered in the application of this new technique. Some of these instabilities and the methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::248d2226f7e671c175d99e53020509e7
https://doi.org/10.1149/1.2127775
https://doi.org/10.1149/1.2127775
Publikováno v:
IEEE Transactions on Electron Devices. 32:2812-2818
The Insulated Gate Transistor (IGT) is modeled as a bi-polar junction transistor (BJT) driven by a MOSFET. The bipolar nature of the device is examined by studying the effects of carrier lifetime on electrical performance. This model also predicts th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dada2eee72a80412bc3a3011158ff31e
https://doi.org/10.1109/t-ed.1985.22420
https://doi.org/10.1109/t-ed.1985.22420
Publikováno v:
1984 International Electron Devices Meeting.
The Insulated Gate Transistor (IGT) is a new power switching device which appears promising for high voltage applications. As of this date, however, this device has not been quantitatively modeled or optimized. The aim of the present study is to deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac473032c7e2c1e74dc0e3549f08e298
https://doi.org/10.1109/iedm.1984.190700
https://doi.org/10.1109/iedm.1984.190700
Autor:
R. Wrathall, D. Pattanayak, G. Gauffreau, K. Owyang, Mike F. Chang, I. Hshieh, Hamza Yilmaz, R.G. Hodgins
Publikováno v:
IEEE Transactions on Electron Devices. 34:2360-2361
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a307055ce9ba3169c200a10d75a919b5
https://doi.org/10.1109/t-ed.1987.23257
https://doi.org/10.1109/t-ed.1987.23257
Publikováno v:
IEE Proceedings I Solid State and Electron Devices. 132:261
A 1200 V n-channel insulated gate transistor (IGT) has been designed and evaluated. To reduce the Miller capacitive coupling of the input and the output terminals during the transient conditions, the terraced gate design has been implemented. As a re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4d014ff1386cdfbf4a9f4b95bf0012b
https://doi.org/10.1049/ip-i-1.1985.0058
https://doi.org/10.1049/ip-i-1.1985.0058