Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Mike Andersson"'
Autor:
Yuchen Shi, Shun Kashiwaya, Pernilla Helmer, Jun Lu, Mike Andersson, Andrejs Petruhins, Johanna Rosen, Lars Hultman
Publikováno v:
Results in Materials, Vol 18, Iss , Pp 100403- (2023)
Intercalation of noble metals into non-van der Waals solids provides a new avenue to synthesize novel nanolaminated compounds with distinct material properties. Herein, we use solid-state reaction at 400 °C to prepare Cr2AuC from two Cr-based Mn+1AX
Externí odkaz:
https://doaj.org/article/4788638cf1374e1ead4d7feaa1323435
Publikováno v:
Proceedings, Vol 56, Iss 1, p 41 (2021)
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film
Externí odkaz:
https://doaj.org/article/2b5194aa09db4351a2998dbb5a2954ee
Autor:
Manuel Bastuck, Donatella Puglisi, Anita Lloyd Spetz, Andreas Schütze, Tilman Sauerwald, Mike Andersson
Publikováno v:
Proceedings, Vol 2, Iss 13, p 999 (2018)
Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. T
Externí odkaz:
https://doaj.org/article/d2bb9f1ac22e4bedb47bf8ca293ae37d
Publikováno v:
Proceedings, Vol 2, Iss 13, p 1068 (2018)
The performance of Silicon Carbide based field effect gas sensor devices, modified to enable long-term reliable operation with improved sensitivity to e.g., NH3 and CO at relevant temperatures for exhaust/flue gas emissions monitoring and control of
Externí odkaz:
https://doaj.org/article/94a2e914620940ffa7accc844fef3e70
Autor:
Shun Kashiwaya, Yuchen Shi, Jun Lu, Davide Sangiovanni, Mike Andersson, Johanna Rosen, Lars Hultman
The quest to make free-standing monolayer gold has hitherto been limited to free-standing several-atoms-thick layers, or monolayers but confined on or inside another template. Examples are monolayers diffused into double hydroxides1, membranes framed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a379623c7bcadaf70822c51a11d12ec7
https://doi.org/10.21203/rs.3.rs-2807259/v1
https://doi.org/10.21203/rs.3.rs-2807259/v1
Autor:
Lida Khajavizadeh, Mike Andersson
Publikováno v:
2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering (ICECCME).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7dc8d3c704ae1e9ead342125439b1fb
https://doi.org/10.1109/iceccme55909.2022.9988741
https://doi.org/10.1109/iceccme55909.2022.9988741
Publikováno v:
Proceedings, Vol 56, Iss 41, p 41 (2020)
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::203d5bc8f397dd57147efb824dca7bb9
https://www.mdpi.com/2504-3900/56/1/41
https://www.mdpi.com/2504-3900/56/1/41
The introduction of silicon carbide as the semiconductor in gas-sensitive field effect devices has disruptively improved this sensor platform extending the operation temperature to more than 600 °C ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd82e29145485150bcfc20c90caaeecb
https://doi.org/10.1016/b978-0-08-102559-8.00010-0
https://doi.org/10.1016/b978-0-08-102559-8.00010-0
Publikováno v:
Surface Science. 656:77-85
Ruthenium(IV)oxide (RuO 2 ) is a material used for various purposes. It acts as a catalytic agent in several reactions, for example oxidation of carbon monoxide. Furthermore, it is used as gate material in gas sensors. In this work theoretical and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1168914fcd058a1b2ab075739e921f53
https://doi.org/10.1016/j.susc.2016.10.006
https://doi.org/10.1016/j.susc.2016.10.006