Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Mikael Ostling"'
Autor:
Mikael Östling, Bengt Gunnar Malm, Martin von Haartman, Julius H ̊allstedt, Zhen Zhang, Per-Erik Hellström, Shili Zhang
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Di
Externí odkaz:
https://doaj.org/article/8251508ceaf44c87a486e43006ec420a
Autor:
Jiantong Li, Mikael Östling
Publikováno v:
Crystals, Vol 3, Iss 1, Pp 163-190 (2013)
Graphene is a promising electrode material for supercapacitors mainly because of its large specific surface area and high conductivity. In practice, however, several fabrication issues need refinement. The restacking of graphene flakes upon being pac
Externí odkaz:
https://doaj.org/article/fd967a46bbf6488387071e670f556012
Publikováno v:
Micromachines, Vol 9, Iss 11, p 544 (2018)
Silicon ribbons (SiRi) have been well-established as highly sensitive transducers for biosensing applications thanks to their high surface to volume ratio. However, selective and multiplexed detection of biomarkers remains a challenge. Further, very
Externí odkaz:
https://doaj.org/article/d8935dec47d3422f9b68b51857b554d0
Autor:
Shuoben Hou, Muhammad Shakir, Per-Erik Hellstrom, Bengt Gunnar Malm, Carl-Mikael Zetterling, Mikael Ostling
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 116-121 (2020)
An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors a
Externí odkaz:
https://doaj.org/article/37e6bee9a1fd4f1aa7450442ba24237a
Autor:
Mikael Ostling
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1306-1320 (2019)
The Journal of Electron Devices Society (J-EDS) was founded in 2015 and since then is a very fast-growing journal. With over 400 papers submitted this year the number of editors has also expanded, but more so, the number of top-notch reviewers has na
Externí odkaz:
https://doaj.org/article/26a9ad23ca7d40bdb9bc7cc66b704719
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 139-145 (2018)
4H-SiC p-i-n photodiodes with various mesa areas (40 000 μm2, 2500 μm2, 1600 μm2, and 400 μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C, 400 °C, and 500 °C. The ca
Externí odkaz:
https://doaj.org/article/7b6eff56f9434679a6a8a66d1260ac3e
Autor:
Ahmad Abedin, Laura Zurauskaite, A. Asadollahi, Konstantinos Garidis, Ganesh Jayakumar, B. Gunnar Malm, Per-Erik Hellstrom, Mikael Ostling
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 588-593 (2018)
A low temperature (Tmax = 350 °C) process for Germanium (Ge) on insulator (GOI) substrate fabrication with thicknesses of less than 25 nm is reported in this paper. The process is based on a single step epitaxial growth of a Ge/SiGe/Ge stack on Si,
Externí odkaz:
https://doaj.org/article/e595adbfe8314ac48c950dfbc900082b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 5, Pp 397-404 (2015)
Integration of a high-k interfacial layer (IL) is considered the leading technological solution to extend the scalability of Hf-based high-k/metal gate CMOS technology. We have previously shown that thulium silicate (TmSiO) IL can provide excellent e
Externí odkaz:
https://doaj.org/article/cf347db05d814774bb4e6c9b15732701
Autor:
Mikael Ostling
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1-1 (2019)
We enter 2019 with enforced spirit and confidence. The Journal of Electron Devices Society has developed extremely well over the past few years.
Externí odkaz:
https://doaj.org/article/a6a1d98665fb44f1833309374873b4e2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 6, Pp 430-431 (2017)
We have just received the breaking news that our most recent Impact Factor (IF) count is now 3.14! up from the first measure at 1.5. This should really give us self-confidence, and encouragement to pursue even more pace towards quality papers. The ou
Externí odkaz:
https://doaj.org/article/72a09f88789943309fca0b7645fe9dad