Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Mihai Razvan Mitroi"'
Publikováno v:
Journal of Power and Energy Engineering. :29-38
It is adopted the single-diode solar cell model and extended for a PV module. The current vs. voltage (I-V) characteristic based on the Lambert W-function was used. The estimation parameters for the simulation approach of the photovoltaic (PV) module
Publikováno v:
Journal of Energy Engineering. 143
A numerical analysis for performance optimization of solar cells based on heterojunctions with copper oxide (Cu2O) is performed. The equations given by the single-diode model for solar cell...
Publikováno v:
International Journal of Photoenergy, Vol 2017 (2017)
A tandem solar cell consisting of a bottom c-Si high-efficiency subcell and a top low-cost Cu2O subcell in parallel configuration is evaluated for the first time by a use of an electrical model. A numerical simulation based on the single-diode model
Autor:
Dragos Comaneci, Edina Rusen, Corneliu Cincu, Aurel Diacon, Catalin Zaharia, Constantin Rosu, Laurentiu Fara, Mihai Razvan Mitroi, Cristian Boscornea
Publikováno v:
Optical Materials. 32:1583-1586
This paper deals with the synthesis and characterization of new phtalocyanine based chromophores and new electrolyte for the fabrication of dye-sensitized solar cells (DSSCs) and hybrid dye-sensitized solar cells. The new phtalocyanines-based chromop
Publikováno v:
Progress in Photovoltaics: Research and Applications. 19:301-306
A numerical method to determine the cell parameters from the analysis of the J–V characteristics of a polymer solar cell is proposed. This method uses the equations given by the diode model, experimental data from the literature, and an adequate fi
Publikováno v:
Journal of Nanoparticle Research. 13:1605-1612
The quantum efficiency of the absorption on quantum confinement levels is investigated. This is achieved by modeling the electron confinement in a spherical quantum dot (QD). The confinement levels are calculated using both infinite and finite rectan
Publikováno v:
Solid-State Electronics. 51:1328-1337
In this paper, the trapping phenomena in silicon-based nanocrystalline semiconductors are studied. We propose a general and complete model for optical charging spectroscopy measurements, which takes into account the trapping–detrapping–retrapping
Publikováno v:
Modern Physics Letters B. 17:273-279
The limits of the Maxwell–Wagner model for interfacial losses in composite materials are discussed. The model is improved by taking into account the frequency dependence of the loss resistances. The improved model is applied to the statistical anal
Publikováno v:
Journal of Nanomaterials, Vol 2014 (2014)
We propose a numerical procedure consisting of a simplified physical model and a numerical method with the aim of optimizing the performance parameters of dye-sensitized solar cells (DSSCs). We calculate the real rate of absorbed photons (in the dye
Autor:
A. Slav, C. Palade, Sorina Lazanu, Mihai Razvan Mitroi, Ana-Maria Lepadatu, Ionel Stavarache, G. Iordache, Magdalena Lidia Ciurea
Publikováno v:
CAS 2012 (International Semiconductor Conference).
N-type P-doped silicon single crystals with resistivity higher than 8000 Ucm were irradiated with 127I6+ ions of 28 MeV kinetic energy. The penetration of the ions through the target and the processes of energy loss were simulated using the CTRIM Mon