Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Midori Nonogaki"'
Autor:
Gunawan Gunawan, Takashi Harada, Midori Nonogaki, Michio Matsumura, Wilman Septina, Shigeru Ikeda
Publikováno v:
Advanced Materials Research. 894:427-431
Polycrystalline CuInS2 chalcopyrite thin films were formed on a Mocoated glass substrate by annealing of a spray deposited precursor film in a sulfur atmosphere at 600 °C. Partial incorporation of Ga in the CuInS2 film with a Ga/In ratio of ca. 0.2
Autor:
Tomohito Ushirokawa, Ken Ozeki, Midori Nonogaki, Kazufumi Yuasa, Masatoshi Noritake, Matsuo Hidenori, Takeda Takashi, Keiichi Hirose
Publikováno v:
2015 IEEE International Telecommunications Energy Conference (INTELEC).
The facility cost of the storage systems are a critical issue in the construction of micro grid, which is the core of the renewable energy. We propose the direct current mutual power interchange system as a way to reduce the storage battery capacity.
Publikováno v:
2015 IEEE International Telecommunications Energy Conference (INTELEC).
We developed and field-tested an electric vehicle quick charger (EVQC) with storage battery to suppress the lengthening of charging time while preventing a rise in a building's peak power usage caused by EV charging. This EVQC features a demand contr
Publikováno v:
2015 IEEE International Telecommunications Energy Conference (INTELEC).
In Japan, the liberalization of the electricity retail market is starting in April 2016. Consumers will be able to choose the retail electric suppliers from which to buy. In Germany which domestic electricity market was fully liberalized in 1998, Sta
Publikováno v:
2014 IEEE 36th International Telecommunications Energy Conference (INTELEC).
Autor:
Michio Matsumura, Gunawan Gunawan, Wilman Septina, Takashi Harada, Midori Nonogaki, Shigeru Ikeda
Publikováno v:
Catalysis Science & Technology. 3:1849
Polycrystalline CuInS2 chalcopyrite thin films were formed on a Mo-coated glass substrate by annealing of spray deposited precursor films in a sulfur atmosphere. Structural and photoelectrochemical analyses of CuInS2 films obtained by annealing at 50