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pro vyhledávání: '"Mickael Lozach"'
Autor:
Vladimir Svrcek, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, Roland Tomašiūnas
Publikováno v:
Nanomaterials, Vol 8, Iss 12, p 1039 (2018)
In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobili
Externí odkaz:
https://doaj.org/article/0c83f448de6f4940a249ef0ce6380cea