Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Mickaël Cassé"'
Autor:
Hervé Boutry, Thierry Baron, Oliver Faynot, Thomas Ernst, Christophe Vallée, Mathilde Billaud, Gilles Reimbold, Julien Duvernay, Bernard Pelissier, Mickaël Cassé, Mickael Martin, Zdenek Chalupa, Maud Vinet, Helen Grampeix, Sylvain David
Publikováno v:
ECS Transactions
ECS Transactions, 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
The achievement of a good high-k oxide/InGaAs interface quality is a key challenge to obtain high performance MOSFET. Associating Al2O3 and HfO2 in a bilayer oxide is interesting to benefit from the good interface quality obtained with Al2O3 and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47708159cb4c5a5a47223d9349b10baa
https://doi.org/10.1149/06905.0009ecst
https://doi.org/10.1149/06905.0009ecst
Autor:
F. Allain, Olivier Faynot, Mickaël Cassé, David Cooper, Cyrille Le Royer, Olivier Weber, Sorin Cristoloveanu, Jean-Michel Hartmann, Claude Tabone, Francois Andrieu, Bernard Previtali, Pierre Perreau, A. Villalon, P. Scheiblin, Jaome Mazurier
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩
IEEE Transactions on Electron Devices, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩
IEEE Transactions on Electron Devices, 2013, 60 (5), pp.1568-1574. ⟨10.1109/TED.2013.2255055⟩
We report on ultrascaled (LG = 23 nm) compressively strained SiGe-based FDSOI pMOSFET with ultrathin body. The devices have been fabricated using a high-K metal gate (TiN/HfSiON) process flow. SiGe channels (3.4 nm) have been epitaxially grown on 3-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c5ba6bc403f3a83acec9c1c2d2e7a24
https://hal.archives-ouvertes.fr/hal-00994552
https://hal.archives-ouvertes.fr/hal-00994552
