Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Michl Kaiser"'
Publikováno v:
Materials Science Forum. :1166-1169
Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman intensity of a single graphene layer is rather low compared to the signal of SiC. In this work we follow an app
Autor:
Mikael Syväjärvi, Peter J. Wellmann, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Rositza Yakimova, Michl Kaiser
Publikováno v:
Materials Science Forum. :19-22
Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted t
Autor:
Valdas Jokubavicius, Haiyan Ou, Mikael Syväjärvi, Margareta K. Linnarsson, Rickard Liljedahl, Michl Kaiser, Peter J. Wellmann, Yiyu Ou
Publikováno v:
Materials Science Forum. :397-400
Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sub
Autor:
Saskia Schimmel, Mikael Syväjärvi, Haiyan Ou, Margareta K. Linnarsson, Philip Hens, Peter J. Wellmann, Yiyu Ou, Rickard Liljedahl, Valdas Jakubavicius, Michl Kaiser, Rositza Yakimova, Jianwu Sun
Publikováno v:
Schimmel, S, Kaiser, M, Hens, P, Jokubavicus, V, Liljedahl, R, Sun, J W, Yakimova, R, Ou, Y, Ou, H, Linnarsson, M K, Wellmann, P & Syväjärvi, M 2012, ' Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates ', European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012-06/09/2012 .
Technical University of Denmark Orbit
Technical University of Denmark Orbit
Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This
Autor:
Thomas Hupfer, Margareta K. Linnarsson, Saskia Schimmel, Mikael Syväjärvi, Haiyan Ou, Yiyu Ou, Peter J. Wellmann, Valdas Jokubavicius, Michl Kaiser
Publikováno v:
Technical University of Denmark Orbit
Kaiser, M, Hupfer, T, Jokubavicus, V, Schimmel, S, Syväjärvi, M, Ou, Y, Ou, H, Linnarsson, M K & Wellmann, P 2012, ' Polycrystalline SiC as source material for the growth of fluorescent SiC layers ', European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012-06/09/2012 .
Kaiser, M, Hupfer, T, Jokubavicus, V, Schimmel, S, Syväjärvi, M, Ou, Y, Ou, H, Linnarsson, M K & Wellmann, P 2012, ' Polycrystalline SiC as source material for the growth of fluorescent SiC layers ', European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012-06/09/2012 .
Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC
Autor:
Mikael Syväjärvi, Margareta K. Linnarsson, Rositza Yakimova, Peter J. Wellmann, Michl Kaiser, Valdas Jokubavicius, Haiyan Ou, Yiyu Ou
Publikováno v:
Ou, Y, Jokubavicus, V, Kaiser, M, Wellmann, P, Linnarsson, M K, Yakimova, R, Syväjärvi, M & Ou, H 2012, ' Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC ', European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012-06/09/2012 .
Technical University of Denmark Orbit
Technical University of Denmark Orbit
Surface nanocones on 6H-SiC have been developed and demonstrated as an effective method of enhancing the light extraction efficiency from fluorescent SiC layers. The surface reflectance, measured from the opposite direction of light emission, over a
Autor:
Valdas Jokubavicius, Michl Kaiser, Mikael Syväjärvi, Thomas Hupfer, Philip Hens, Peter J. Wellmann
Publikováno v:
Materials Science Forum. :52-55
Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass
Autor:
Peter J. Wellmann, Valdas Jokubavicius, Michl Kaiser, S. Sano, S. Kamiyama, Jianwu Sun, Rositza Yakimova, Mikael Syväjärvi, Richard Liljedahl, Philip Hens
Publikováno v:
Thin Solid Films. 522:7-10
The growth of fluorescent SiC using Fast Sublimation Growth Process was demonstrated using different types of SiC source materials. These were prepared by (i) high-temperature hot pressing, (ii) chemical vapor deposition and (iii) physical vapor tran
Autor:
Rickard Liljedahl, Mikael Syväjärvi, Saskia Schimmel, Yiyu Ou, Michl Kaiser, Haiyan Ou, Jianwu Sun, Margareta K. Linnarsson, Aikaterini Argyraki, Valdas Jokubavicius, Peter J. Wellmann
Publikováno v:
The European Physical Journal B. 87
Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the
Autor:
Felix Fromm, Alexey B. Kuzmenko, I. Crassee, Nicolas Ubrig, Julien Levallois, Thomas Seyller, Michl Kaiser, Ievgeniia O. Nedoliuk
Publikováno v:
OPTICS EXPRESS
Optics Express, Vol. 21, No 21 (2013) pp. 24736-24741
Optics Express, Vol. 21, No 21 (2013) pp. 24736-24741
We demonstrate that giant Faraday rotation in graphene in the terahertz range due to the cyclotron resonance is further increased by constructive Fabry-Perot interference in the supporting substrate. Simultaneously, an enhanced total transmission is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1a64289aaa6c3511a4269a0982af860
http://arxiv.org/abs/1303.1634
http://arxiv.org/abs/1303.1634