Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Michiya Kume"'
Autor:
Kohei Ihara, Michiya Kume, Miyuki Sumitomo, Shuichi Tada, Hideaki Yoshiwara, Tomimoto Takahiro, Muneo Yamamoto
Publikováno v:
Journal of the Japan Institute of Metals. 76:107-111
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7996647c37bbd3694eab2b3f7e32d035
https://doi.org/10.2320/jinstmet.76.107
https://doi.org/10.2320/jinstmet.76.107
Publikováno v:
Journal of the Society of Materials Science, Japan. 41:552-556
A new nitriding process titanium furface using the self propagating high temperature synthesis has been developed. A titanium plate was embeded in or coated with the self combustion agent of Nb or Ti metal powders, and the agent was ignited in a pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e61ea0b49f453701801077fd1dcac8
https://doi.org/10.2472/jsms.41.552
https://doi.org/10.2472/jsms.41.552
Publikováno v:
Japanese Journal of Applied Physics. 24:35
Energetic neutral oxygen atoms bombarding the substrate in DC diode sputtering and DC planar magnetron sputtering were detected by a time-of-flight apparatus. In analyzing the time-of-flight spectrum, the energy distribution of the energetic oxygen a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13c33dbd88718758b840fc700b648d2
https://doi.org/10.1143/jjap.24.35
https://doi.org/10.1143/jjap.24.35
Publikováno v:
Japanese Journal of Applied Physics. 24:944
Conductive ZnO films were prepared by DC planar magnetron sputtering and DC diode sputtering, and the reason for the high resistivity shown by the films at the substrate positions facing the eroded area of the target was investigated. It was found th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b998c58ebb5862a3e999f6cb528047e5
https://doi.org/10.1143/jjap.24.944
https://doi.org/10.1143/jjap.24.944
Publikováno v:
Japanese Journal of Applied Physics. 27:2414
The decrease of the deposition rate of SiO2 sputtered films is investigated by using time-of-flight apparatus. It is found that the increase of signal intensity of H atoms corresponds to the decrease of the deposition rate of SiO2 films, which confir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cab0b53f78810adde7d55907da66f7e
https://doi.org/10.1143/jjap.27.2414
https://doi.org/10.1143/jjap.27.2414
Publikováno v:
Japanese Journal of Applied Physics. 23:936
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32a5530c3b49b046f54c93fec718348
https://doi.org/10.1143/jjap.23.936
https://doi.org/10.1143/jjap.23.936
Publikováno v:
Japanese Journal of Applied Physics. 24:28
Using Zn metal disk target, ZnO films were prepared in Ar+O2 mixed gas by both DC planar magnetron sputtering and RF diode sputtering. The dependence of c-axis orientation of ZnO film on O2 partial pressure was examined from the view point of the bom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e77d6a3f022c4940c8a710e12273c64
https://doi.org/10.7567/jjaps.24s3.28
https://doi.org/10.7567/jjaps.24s3.28